Characterization of process-induced charging damage in scaled-down devices and reliability improvement using time-modulated plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1431-1436

  Noguchi, Ko ^a   Samukawa, Seiji ^a   Ohtake, Hiroto ^a   Mukai, Tomonori ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; HOT CARRIERS; MOS DEVICES;

INDUCTIVELY COUPLED PLASMA (ICP) POLYSILICON ETCHER; TIME-MODULATED PLASMA;

PLASMA ETCHING;

EID: 0034225990     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582366     Document Type: Article

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