Influence of pulsed electron cyclotron resonance plasma on gate electrode etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. B, 1998, Pages 2302-2305

  Fujiwara, Nobuo ^a   Maruyama, Takahiro ^a   Miyatake, Hiroshi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Charge build up; Electron cyclotron resonance; Electron temperature; Ion sheath; Microwave plasma; Plasma etching

Indexed keywords

CURRENT DENSITY; ELECTRODES; ELECTRON CYCLOTRON RESONANCE; EMISSION SPECTROSCOPY; MICROWAVE POWER TRANSMISSION; PLASMA SHEATHS; POWER CONTROL;

PULSED ELECTRON CYCLOTRON RESONANCE (ECR) PLASMA; TIME RESOLVED OPTICAL EMISSION SPECTROSCOPY;

PLASMA ETCHING;

EID: 0032045768     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2302     Document Type: Article

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