Maintaining reproducible plasma reactor wall conditions: SF6 plasma cleaning of films deposited on chamber walls during Cl2/O2 plasma etching of Si

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 20, Issue 4, 2002, Pages 1195-1201

  Ullal, Saurabh J ^a   Singh, Harmeet ^b   Daugherty, John ^b   Vahedi, Vahid ^b   Aydil, Eray S ^a,b  

^a University of California   (United States)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEACHING; PLASMA DIAGNOSTICS; PLASMA ETCHING; SILICON WAFERS;

PLASMA REACTOR WALL; SILICON OXYCHLORIDE;

SEMICONDUCTING SILICON;

EID: 0036649080     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1479733     Document Type: Article

References (31)