Plasma/reactor walls interactions in advanced gate etching processes

Thin Solid Films

Volumn 515, Issue 12, 2007, Pages 4846-4852

  Ramos, R ^a   Cunge, G ^a   Joubert, O ^a   Sadeghi, N ^b   Mori, M ^c   Vallier, L ^a  

^a Laboratoire Interdisciplinaire de Physique   (France)

^b CNRS   (France)

^c HITACHI LTD   (Japan)

Author keywords

Aluminum fluoride; Chamber walls cleaning and conditioning; Plasma etching; Process drift

Indexed keywords

ANISOTROPIC ETCHING; DRIFT CHAMBERS; DRY CLEANING; GATES (TRANSISTOR); X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM FLUORIDE; CHAMBER WALLS; CHAMBER WALLS CLEANING; PROCESS DRIFTS;

PLASMA ETCHING;

EID: 33947170936     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.10.025     Document Type: Article

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