Influence of the reactor wall composition on radicals' densities and total pressure in Cl2 inductively coupled plasmas: II. during silicon etching

Journal of Applied Physics

Volumn 102, Issue 9, 2007, Pages

  Cunge, G ^a   Sadeghi, N ^b   Ramos, R ^a  

^a CEA LETI   (France)

^b LIPHY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHLORINE; ETCHING; MASS SPECTROMETRY; SILICON; SILICON WAFERS;

LASER ABSORPTION; MOLE FRACTIONS; REACTOR WALL COMPOSITION; SILICON ETCHING;

INDUCTIVELY COUPLED PLASMA;

EID: 85026341102     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2803881     Document Type: Article

References (37)

1. S. Samukawa, Appl. Phys. Lett. 68, 316 (1996).
2. L. Sha and J. P. Chang, J. Vac. Sci. Technol. A 22, 88 (2004).
3. K. Zhu, V. Kuryatkov, B. Borisov, G. Kipshidze, S. A. Nikishin, H. Temkin, and M. Holtz, Appl. Phys. Lett. 81, 4688 (2002).
4. W. T. Lim, I. K. Baek, J. W. Lee, E. S. Lee, M. H. Jeon, G. S. XCho, Y. W. Heo, D. P. Norton, and S. J. Pearton, Appl. Phys. Lett. 83, 3105 (2003).
5. K. Ono, T. Oomori, M. Tuda, and K. Namba, J. Vac. Sci. Technol. A 10, 1071 (1992).
6. V. M. Donnelly, J. Vac. Sci. Technol. A 14, 1076 (1996).
7. M. V. Malyshev, V. M. Donnelly, A. Kornblit, and N. A. Ciampa, J. Appl. Phys. 84, 137 (1998).
8. G. Cunge, J. P. Booth, and J. Derouard, Chem. Phys. Lett. 263, 645 (1996).
9. M. Kogelschatz, G. Cunge, and N. Sadeghi, Eur. Phys. J.: Appl. Phys. 33, 205 (2006).
10. A. D. Richards, B. E. Thompson, K. D. Allen, and H. H. Sawin, J. Appl. Phys. 62, 792 (1987).
11. F. Neuilly, J. P. Booth, and L. Vallier, J. Vac. Sci. Technol. A 20, 225 (2002).
12. G. Cunge, M. Mori, M. Kogelschatz, and N. Sadeghi, Appl. Phys. Lett. 88, 051501 (2006).
13. G. Cunge, N. Sadeghi, and R. Ramos, J. Appl. Phys. 102, 093304 (2007).
14. V. M. Donnelly, J. Appl. Phys. 79, 9353 (1996).
15. S. J. Ullal, A. R. Godfrey, E. A. Edelberg, L. B. Braly, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A 20, 43 (2002).
16. G. Cunge, O. Joubert, and N. Sadeghi, J. Appl. Phys. 94, 6285 (2003).
17. M. Kogelschatz, G. Cunge, and N. Sadeghi, J. Vac. Sci. Technol. A 22, 624 (2004).
18. S. Xu, Z. Sun, X. Qian, J. Holland, and D. Podlesnik, J. Vac. Sci. Technol. B 19, 166 (2001).
19. G. P. Kota, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A 16, 270 (1998).
20. B. Clarenbach, B. Lorenz, M. Krämer, and N. Sadeghi, Plasma Sources Sci. Technol. 12, 345 (2003).
21. J. B. Burkholder and E. J. Blair, J. Phys. Chem. 87, 1859 (1983).
22. M. Kogelschatz, G. Cunge, and N. Sadeghi, J. Phys. D 37, 1954 (2004).
23. G. Cunge, R. L. Inglebert, O. Joubert, L. Vallier, and N. Sadeghi, J. Vac. Sci. Technol. B 20, 2137 (2002).
24. N. S. J. Braithwaite, J. P. Booth, and G. Cunge, Plasma Sources Sci. Technol. 5, 677 (1996).
25. G. Cunge, M. Kogelschatz, O. Joubert, and N. Sadeghi, Plasma Sources Sci. Technol. 14, S42 (2005).
26. C. Lee, D. B. Graves, and M. A. Lieberman, Plasma Chem. Plasma Process. 16, 99 (1996).
27. M. W. Kiehlbauch and D. B. Graves, J. Vac. Sci. Technol. A 21, 116 (2003).
28. G. Cunge, M. Kogelschatz, and N. Sadeghi, J. Appl. Phys. 96, 4578 (2004).
29. S. J. Ullal, H. Singh, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A 20, 499 (2002).
30. R. Petri, N. Sadeghi, and D. Henry, J. Vac. Sci. Technol. A 13, 2930 (1995).
31. O. Joubert, G. Cunge, B. Pelissier, L. Vallier, M. Kogelschatz, and E. Pargon, J. Vac. Sci. Technol. A 22, 553 (2004).
32. G. Cunge, B. Pelissier, O. Joubert, R. Ramos, and C. Maurice, Plasma Sources Sci. Technol. 14, 599 (2005).
33. R. Ramos, G. Cunge, O. Joubert, N. Sadeghi, M. Mori, and L. Vallier, Thin Solid Films 515, 4846 (2007).
34. R. Ramos, G. Cunge, and O. Joubert, J. Vac. Sci. Technol. A 25, 290 (2007).
35. G. Cunge, M. Kogelschatz, and N. Sadeghi, Plasma Sources Sci. Technol. 13, 522 (2004).
36. M. A. Sobolewski, J. Appl. Phys. 97, 33301 (2005).
37. A. Le Gouil, E. Pargon, G. Cunge, O. Joubert, and B. Pelissier, J. Vac. Sci. Technol. B 24, 2191 (2006).