Crystal phases in III-V nanowires: From random toward engineered polytypism

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 4, 2011, Pages 829-846

  Caroff, Philippe ^a   Bolinsson, Jessica ^b   Johansson, Jonas ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b LUND UNIVERSITY   (Sweden)

Author keywords

Gold assisted vapor liquid solid (VLS) growth; III V nanowires (NWs); metalorganic vapor phase epitaxy (MOVPE); molecular beam epitaxy (MBE); nucleation kinetics modeling; polytypism; stacking faults (SFs); thermodynamic modeling; twin plane (TP); wurtzite (WZ); zinc blende (ZB)

Indexed keywords

III-V NANOWIRES (NWS); METALORGANIC VAPOR PHASE EPITAXY (MOVPE); MOLECULAR BEAM EPITAXY (MBE); NUCLEATION KINETICS MODELING; POLYTYPISM; THERMODYNAMIC MODELING; TWIN PLANES; VAPOR-LIQUID-SOLID GROWTH; WURTZITES; ZINC BLENDE (ZB);

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; STACKING FAULTS; VAPORS; ZINC; ZINC SULFIDE;

CRYSTAL GROWTH FROM VAPOR;

EID: 80051705411     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2070790     Document Type: Review

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