Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures

Journal of Materials Research

Volumn 21, Issue 11, 2006, Pages 2801-2809

  Chen, C ^a   Plante, M C ^a   Fradin, C ^b   LaPierre, R R ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOTECHNOLOGY; STACKING FAULTS;

CORE-SHELL STRUCTURE; SEGMENTED NANOWIRES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 33751431336     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2006.0341     Document Type: Article

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