Understanding the 3D structure of GaAs〈111〉 B nanowires

Nanotechnology

Volumn 18, Issue 48, 2007, Pages

  Karlsson, Lisa S ^a   Dick, Kimberly A ^a   Wagner, Jakob B ^a   Malm, Jan Olle ^a   Deppert, Knut ^a   Samuelson, Lars ^a   Wallenberg, L Reine ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LAYERS; HIGH RESOLUTION ELECTRON MICROSCOPY; LAMELLAR STRUCTURES; TWINNING;

FOURIER TRANSFORM MAPPING; INDEX ZONES; MULTI SLICE SIMULATIONS; TWIN SEGMENTS;

NANOWIRES;

GALLIUM ARSENIDE; NANOWIRE;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; ELECTRON MICROSCOPY; FOURIER TRANSFORMATION; MATERIALS TESTING; NANOCHEMISTRY; PRIORITY JOURNAL;

EID: 35748984098     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/48/485717     Document Type: Article

References (53)

1. Li Y, Qian F, Xiang J and Lieber C M 2006 Nanowire electronic and optoelectronic devices Mater Today 9 18-27
2. Thelander C et al 2006 Nanowire-based one-dimensional electronics Mater Today 9 28-35
3. Yu B and Meyyappan M 2006 Nanotechnology: role in emerging nanoelectronics Solid-State Electron. 50 536-44
4. Wang Z L 2004 Nanostructures of zinc oxide Mater Today 7 26-33
5. 2 hetero-junction beaded nanowires J. Cryst. Growth 284 73-9
6. Verheijen M A, Immink G, de Smet T, Borgström M T and Bakkers E P A M 2006 Growth kinetics of heterostructured GaP-GaAs nanowires J. Am. Chem. Soc. 128 1353-9
7. Bauer J, Gottschalch V, Paetzelt H, Wagner G, Fuhrmann B and Leipner H S 2007 MOVPE growth and real structure of vertical-aligned GaAs nanowires J. Cryst. Growth 298 625-30
8. Wacaser B A, Deppert K, Karlsson L S, Samuelson L and Seifert W 2006 Growth and characterization of defect free GaAs nanowires J. Cryst. Growth 287 504-8
9. Krishnamachari U, Borgström M, Ohlsson B J, Panev N, Samuelson L, Seifert W, Larsson M W and Wallenberg L R 2004 Defect-free InP nanowires grown in [001] direction on InP (001) Appl. Phys. Lett. 85 2077-9
10. Johansson J, Wacaser B A, Dick K A and Seifert W 2006 Growth related aspects of epitaxial nanowires Nanotechnology 17 S355-61
11. Johansson J, Karlsson L S, Svensson C P T, Mårtensson T, Wacaser B A, Deppert K, Samuelson L and Seifert W 2006 Structural properties of -oriented III-V nanowires Nat. Mater. 5 574-80
12. Borgström M, Deppert K, Samuelson L and Seifert W 2004 Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study J. Cryst. Growth 260 18-22
13. Magnusson M, Deppert K, Malm J-O, Bovin J-O and Samuelson L 1999 Size-selected gold nanoparticles by aerosol technology Nano Struct. Mater. 12 45-8
14. Marks L D 1996 Wiener-filter enhancement of noisy HREM images Ultramicroscopy 62 43-52
15. Stadelmann P 2006 Jems Electron Microscopy Software Java Version 3.0308W2006
16. Stadelmann P 1987 EMS-a software package for electron diffraction analysis and HREM image simulation in materials science Ultramicroscopy 21 131-46
17. Karlsson L S, Johansson J, Svensson C P T, Mårtensson T, Wacaser B A, Malm J-O, Deppert K, Seifert W, Samuelsson L and Wallenberg L R 2006 Structural properties of GaP nanowires Proc. 16th Int. Microscopy Congr. vol 3
18. Holt D B 1984 Polarity reversal and symmetry in semiconducting compounds with the sphalerite and wurtzite structures J. Mater. Sci. 19 439-46
19. Cohen D, McKernan S and Carter C B 1999 Characterization of the absolute crystal polarity across twin boundaries in gallium phosphide using convergent-beam electron diffraction Microsc. Microanal. 5 173-86
20. Chen T P, Chen F R, Chuang Y C, Guo Y D, Peng J G, Huang T S and Chen L J 1992 Study of twins in GaAs, GaP and InAs crystals J. Cryst. Growth 118 109-16
21. Mikkelsen A, Sköld N, Ouattara L, Borgström M, Andersen J N, Samuelson L, Seifert W and Lundgren E 2004 Direct imaging of the atomic structure inside a nanowire by scanning tunneling microscopy Nat. Mater. 3 519-23
22. Karlsson L S, Johansson J, Svensson C P T, Mårtensson T, Wacaser B A, Malm J-O, Deppert K, Seifert W, Samuelsson L and Wallenberg L R 2007 Structural characterisation of nanowires by HRTEM Proc. 15th Microscopy of Semiconducting Materials (Cambridge, UK, 2-5 April)
23. Davidson F M III, Wiacek R and Korgel B A 2005 Supercritical fluid-liquid-solid synthesis of gallium phosphide nanowires Chem. Mater. 17 230-3
24. Mariager S O, Sørensen C B, Aagesen M, Nygård J, Feidenhans'l R and Willmott P R 2007 Facet structure of GaAs nanowires grown by molecular beam epitaxy Appl. Phys. Lett. 91 083106
25. Davidson F M III, Lee D C, Fanfair D D and Korgel B A 2007 Lamellar twinning in semiconductor nanowires J. Phys. Chem. C 111 2929-35
26. Watanabe Y, Bhunia S, Fujikawa S, Kawamura T, Nakashima H, Furukawa K and Torimitsu K 2004 Heteroepitaxial metal-organic vapour phase epitaxial growth of InP nanowires on GaP(111)B Thin Solid Films 464/465 248-50
27. Arbiol J, Kalache B, Roca i Cabarrocas P, Morante J R and Fontcuberta i Morral A 2007 Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the vapour-solid-solid mechanism Nanotechnology 18 305606
28. Li Q, Gong X, Wang C, Wang J, Ip K and Hark S 2004 Size-dependent periodically twinned ZnSe nanowires Adv. Mater. 16 1436-40
29. 4 nanowires J. Phys. Chem. B 109 2573-7
30. Nickl J J and Just W 1971 Das wachstum von galliumarsenid-kristallen nach dem VLS-mechanismus J. Cryst. Growth 11 11-20
31. Fujii M, Iwanaga H and Shibata N 1988 Rotation twins in GaP whiskers J. Cryst. Growth 91 229-33
32. Hiruma K, Yazawa M, Katsuyama T, Ogawa K, Haraguchi K, Koguchi M and Kakibayashi H 1995 Growth and optical properties of nanometer-scale GaAs and InAs whiskers J. Appl. Phys. 77 447-62
33. Heddle M F 1884 The geognosy and mineralogy of Scotland Mineral. Mag. 5 271-324
34. Šrot V, Rečnik A, Scheu C, Štrum S and Mirtič B 2003 Stacking faults and twin boundaries in sphalerite crystals from the Trepča mines in Kosovo Am. Mineral. 88 1809-16
35. Honstra J 1960 Dislocations, stacking faults and twins in the spinel structure J. Phys. Chem. Solids 15 311-23
36. Ito T, Sano K, Akiyama T and Nakamura K 2006 A simple approach to polytypes of SiC and its application to nanowires Thin Solid Films 508 243-6
37. Akiyama T, Nakamura K and Ito T 2006 Structural stability and electronic structures of InP nanowires: role of surface dangling bonds on nanowires facets Phys. Rev. B 73 235308
38. Williams D B and Carter C B 1996 Transmission Electron Microscopy (New York: Plenum) p 278, 445
39. Dick K A, Deppert K, Karlsson L S, Wallenberg L R, Samuelson L and Seifert W 2005 A new understanding of Au-assisted growth of III-V semiconductor nanowires Adv. Funct. Mater. 15 1603-10
40. Moll N, Kley A, Pehlke E and Scheffler M 1996 GaAs equilibrium crystal shape from first principles Phys. Rev. B 54 8844-55
41. Sköld N, Wagner J B, Karlsson G, Hernán T, Seifert W, Pistol M-E and Samuelson L 2006 Phase segregation in AlInP shells on GaAs nanowires Nano Lett. 6 2743-7
42. Ouattara L, Mikkelsen A, Sköld N, Eriksson J, Knaapen T, Cavar E, Seifert W, Samuelson L and Lundgren E 2007 GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy Nano Lett. 7 2859-64
43. Sunagawa I 2005 Crystals: Growth, Morphology, & Perfection (Cambridge: Cambridge University Press) pp 132-4
44. Hamilton D R and Seidensticker R G 1960 Propagation mechanism of Ge dendrites J. Appl. Phys. 31 1165-8
45. Zuo J, Paladugu M, Wang H, Auchterlonie G J, Guo Y-N, Kim Y, Gao Q, Joyce H J, Tao H H and Jagadish C 2007 Growth mechanism of truncated triangular III-V nanowires Small 3 389-93
46. Nebol'sin V A, Shchetinin A A, Korneeva A N, Dunaev A I, Dolgachev A A, Sushko T I and Tatarenkov A F 2006 Development of lateral faces during vapour-liquid-solid growth of silicon whiskers Inorg. Mater. 42 339-45
47. Kolasinski K W 2007 Catalytic growth of nanowires: vapour-liquid-solid, vapour-solid-solid, solution-liquid-solid and solid-liquid-solid growth Curr. Opin. Solid State Mater. Sci. 10 182-91
48. Glas F, Harmand J-C and Patriarche G 2007 Why does wurtzite form in nanowires of III-V zinc blende semiconductors Phys. Rev. Lett. 99 146101
49. Wacaser B A 2007 Crystal growth-the importance of interfaces and phase boundaries PhD Thesis Lund University
50. Manna L, Milliron D J, Meisel A, Scher E C and Alivisatos P A 2003 Controlled growth of tetrapod-branched inorganic nanocrystals Nat. Mater 2 382-5
51. Verheijen M A, Algra R E, Borgström M T, Immink G, Sourty E, van Enckevort E J P, Vlieg E and Bakkers E P A M 2007 Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography Nano Lett. 7 3051-5
52. Karlsson L S, Larsson M W, Malm J-O, Wallenberg L R, Dick K A, Deppert K, Seifert W and Samuelson L 2006 Crystal structure of branched epitaxial III-V nanotrees NANO 1 139-51
53. Dick K A, Deppert K, Larsson M W, Mårtensson T, Seifert W, Wallenberg L R and Samuelson L 2004 Synthesis of branched 'nanotrees' by controlled seeding of multiple branching events Nat. Mater. 3 380-4