Effects of facet orientation on relative stability between zinc blende and wurtzite structures in group III-V nanowires

Japanese Journal of Applied Physics

Volumn 49, Issue 5 PART 1, 2010, Pages 0550031-0550035

  Yamashita, Tomoki ^a   Akiyama, Toru ^a   Nakamura, Kohji ^a   Ito, Tomonori ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL TREND; FIRST-PRINCIPLES CALCULATION; GAAS; GROUP III-V NANOWIRES; INP; INTERATOMIC POTENTIAL; IONICITIES; RELATIVE STABILITIES; STRUCTURAL STABILITIES; SURFACE ENERGY DIFFERENCES; WURTZITE STRUCTURE; WURTZITES; ZINC BLENDE; ZINCBLENDE STRUCTURES;

CHEMICAL STABILITY; GALLIUM ALLOYS; GALLIUM ARSENIDE; NANOWIRES; SEMICONDUCTING GALLIUM; SURFACE CHEMISTRY; SURFACE TENSION; ZINC; ZINC SULFIDE;

CRYSTAL STRUCTURE;

EID: 77952683759     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.055003     Document Type: Article

References (45)

1. K. Haraguchi, T. Katsuyama, K. Hiruma, and K. Ogawa: Appl. Phys. Lett. 60 (1992) 745.
2. X. Duan, Y. Huang, Y. Cui, J. Wang, and C. M. Lieber: Nature 409 (2001) 66.
3. M. S. Gudiksen, L. J. Lauhon, J. Wang, D. C. Smith, and C. M. Lieber: Nature 415 (2002) 617.
4. H. Kind, H. Yan, B. Messer, M. Law, and P. Yang: Adv. Mater. 14 (2002) 158.
5. J. Wang, M. S. Gudiksen, X. Duan, Y. Cui, and C. M. Lieber: Science 293 (2001) 1455.
6. M. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang: Science 279 (1998) 208.
7. J. C. Johnson, H.-J. Choi, K. P. Knutsen, R. D. Schaller, P. Yang, and R. J. Saykally: Nat. Mater. 1 (2002) 106.
8. X. Duan, Y. Huang, R. Agarwal, and C. M. Lieber: Nature 421 (2003) 241.
9. K. Hiruma, M. Yazawa, T. Katsuyama, K. Ogawa, K. Haraguchi, M. Koguchi, and H. Kakibayashi: J. Appl. Phys. 77 (1995) 447.
10. M. Yazawa, M. Koguchi, A. Muto, M. Ozawa, and K. Hiruma: Appl. Phys. Lett. 61 (1992) 2051.
11. Z. H. Wu, X. Y. Mei, D. Kim, M. Blumin, and H. E. Ruda: Appl. Phys. Lett. 81 (2002) 5177.
12. H. Li, J. Wu, and Z. Wang: Appl. Phys. Lett. 75 (1999) 1173.
13. Z. H. Wu, M. Sun, X. Y. Mei, and H. E. Ruda: Appl. Phys. Lett. 84 (2004) 657.
14. T. Akiyama, K. Sano, K. Nakamura, and T. Ito: Jpn. J. Appl. Phys. 45 (2006) 275.
15. T. Yamashita, K. Sano, T. Akiyama, K. Nakamura, and T. Ito: Appl. Surf. Sci. 254 (2008) 7668.
16. T. Yamashita, T. Akiyama, K. Nakamura, and T. Ito: Appl. Surf. Sci. 256 (2009) 1054.
17. T. Yamashita, T. Akiyama, K. Nakamura, and T. Ito: to be published in Physica E [doi 10.1016/j.physe.2010.01.037].
18. R. Leitsmann and F. Bechstedt: J. Appl. Phys. 102 (2007) 063528.
19. M. Galicka, M. Bukala, R. Buczko, and P. Kacman: J. Phys.: Condens. Matter 20 (2008) 454226.
20. J. Johansson, L. S. Karlsson, C. P. T. Svensson, T. Mårtensson, B. A. Wacaser, K. Deppert, L. Samuelson, and W. Seifert: Nat. Mater. 5 (2006) 574.
21. J. Johansson, L. S. Karlsson, C. P. T. Svensson, T. Mårtensson, B. A. Wacaser, K. Deppert, L. Samuelson, and W. Seifert: J. Cryst. Growth 298 (2007) 635.
22. R. E. Algra, M. A. Verheijen, M. T. Borgström, L. F. Feiner, G. Immink, W. J. P. van Enckevort, E. Vlieg, and E. P. A. M. Bakkers: Nature 456 (2008) 369.
23. P. Caroff, K. A. Dick, J. Johansson, M. E. Messing, K. Deppert, and L. Samuelson: Nat. Nanotechnol. 4 (2009) 50.
24. M. C. Plante and R. R. LaPierre: J. Cryst. Growth 310 (2008) 356.
25. L. S. Karlsson, K. A. Dick, J. B. Wagner, J. Malm, K. Deppert, L. Samuelson, and L. R. Wallenberg: Nanotechnology 18 (2007) 485717.
26. J. Motohisa, J. Noborisaka, J. Takeda, M. Inari, and T. Fukui: J. Cryst. Growth 272 (2004) 180.
27. K. Ikejiri, J. Noborisaka, S. Hara, J. Motohisa, and T. Fukui: J. Cryst. Growth 298 (2007) 616.
28. K. Tomioka, P. Mohan, J. Noborisaka, S. Hara, J. Motohisa, and T. Fukui: J. Cryst. Growth 298 (2007) 644.
29. P. Mohan, J. Motohisa, and T. Fukui: Nanotechnology 16 (2005) 2903.
30. K. Pemasiri, M. Montazeri, R. Gass, L. M. Smith, H. E. Jackson, J. Yarrison-Rice, S. Paiman, Q. Gao, H. H. Tan, C. Jagadish, X. Zhang, and J. Zou: Nano Lett. 9 (2009) 648.
31. Y. Kitauchi, K. Tomioka, Y. Kobayashi, S. Hara, T. Fukui, and J. Motohisa: Ext. Abstr. 14th Int. Conf. Modulated Semiconductor Structures, 2009, p. 81.
32. K. E. Kohr and S. Das Sarma: Phys. Rev. B 38 (1988) 3318.
33. T. Ito, K. E. Kohr, and S. Das Sarma: Phys. Rev. B 40 (1989) 9715.
34. T. Ito: J. Appl. Phys. 77 (1995) 4845.
35. J. E. Northrup: Phys. Rev. B 50 (1994) 2015.
36. D. R. Lide and H. V. Kehiaian: CRC Handbook of Chemistry and Physics (CRC Press, Boca Raton, FL, 1999) 80th ed., Chap. 12.
37. T. Ito: Jpn. J. Appl. Phys. 37 (1998) L1217.
38. C.-Y. Yeh, Z. W. Lu, S. Froyen, and A. Zunger: Phys. Rev. B 45 (1992) R12130.
39. K. Sano, T. Akiyama, K. Nakamura, and T. Ito: J. Cryst. Growth 301-302 (2007) 862.
40. J. P. Perdew, K. Burke, and M. Ernzerhof: Phys. Rev. Lett. 77 (1996) 3865.
41. D. Vanderbilt: Phys. Rev. B 41 (1990) 7892.
42. N. Troullier and J. L. Martins: Phys. Rev. B 43 (1991) 1993.
43. J. Yamauchi, M. Tsukada, S. Watanabe, and O. Sugino: Phys. Rev. B 54 (1996) 5586.
44. It is well known that reconstructed {111} surfaces, such as the (2 × 2) with a cation vacancy and (2 × 2) with an anion trimer surfaces, are stabilized under growth conditions. Hence, surface energies for the reconstructed {111} surface could be lower than those for the ideal one. According to ref. 45, for various reconstructions we calculate the surface energy difference from the ideal one taking account of growth temperature (T) and pressures of group III (pIII) and V (pV)) sources. Under the experimental growth condition of InP NWs (T = 660 °C, pIII) = 3.34 × 10-3 Torr, pV) = 6.16 × 10-2 Torr),31) stable structures of InP(111)A and InP(111)B surfaces are the (2 × 2) with an In vacancy and (2 × 2) with an In adatom surfaces, respectively. For GaP, the (2 × 2) with a P trimer surface is stabilized for both GaP(111)A and GaP(111)B surfaces (T = 500 °C, pIII) = 9.38 ′ 10-4 Torr, pV) = 5.63 ′ 10-1 Torr).21) The (2 × 2) with a Ga vacancy and (2 × 2) with a Ga adatom surfaces are feasible for GaAs(111)A and GaAs(111)B surfaces for GaAs (T = 750 °C, pIII) = 2.05 ′ 10-3 Torr, pV) = 1.90 ′ 10-1 Torr), respectively.26)
45. T. Akiyama, K. Nakamura, and T. Ito: Phys. Rev. B 73 (2006) 235308.