Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure

Physica Status Solidi - Rapid Research Letters

Volumn 4, Issue 7, 2010, Pages 175-177

  Novikov, B V ^a   Serov, S Yu ^a   Filosofov, N G ^a   Shtrom, I V ^b   Talalaev, V G ^a   Vyvenko, O F ^a   Ubyivovk, E V ^a   Samsonenko, Yu B ^b,c,d   Bouravleuv, A D ^b,c   Soshnikov, I P ^b,c   Sibirev, N V ^b   Cirlin, G E ^b,c,d   Dubrovskii, V G ^b,c  

^a ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^b ST PETERSBURG ACADEMIC UNIVERSITY   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

Author keywords

GaAs; Nanoscale; Optical properties; Semiconductors; Structure

Indexed keywords

BUILDING BLOCKES; BULK MATERIALS; CRYSTAL PHASIS; EXCITON EMISSION; GAAS; LOW TEMPERATURE PHOTOLUMINESCENCE; NANO SCALE; PHOTOLUMINESCENCE PROPERTIES; PL BANDS; PL SPECTRA; QUANTUM CONFINEMENT EFFECTS; RED SHIFT; TEM; TRANSMISSION ELECTRON; WURTZITE CRYSTAL STRUCTURE; WURTZITES; ZINC-BLENDE;

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURED MATERIALS; NANOWIRES; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; STRUCTURAL ANALYSIS; ZINC SULFIDE;

CRYSTAL STRUCTURE;

EID: 77954775230     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004185     Document Type: Article

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