Theoretical investigations for zinc blende-wurtzite polytypism in GaAs layers at Au/GaAs(1 1 1) interfaces

Applied Surface Science

Volumn 254, Issue 23, 2008, Pages 7746-7749

  Haneda, Yuya ^a   Akiyama, Toru ^a   Nakamura, Kohji ^a   Ito, Tomonori ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

First principles calculations; GaAs; Interface; Nanowires; Structural stability; Wurtzite structure; Zinc blende structure

Indexed keywords

CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INTERFACES (MATERIALS); NANOWIRES; SEMICONDUCTING GALLIUM; STABILITY; ZINC; ZINC SULFIDE;

FIRST-PRINCIPLES CALCULATION; GAAS; STRUCTURAL STABILITIES; WURTZITE STRUCTURE; ZINC-BLENDE STRUCTURES;

GOLD;

EID: 51249088597     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.014     Document Type: Article

References (20)

1. Duan X., Huang Y., Cui Y., Wang J., and Lieber C.M. Nature 409 (2001) 66
2. Björk M.T., Ohlsson B.J., Thelander C., Persson A.I., Deppert K., Wallenberg L.R., and Samuelson L. Appl. Phys. Lett. 81 (2002) 4458
3. Wu Z.H., Mei X., Kim D., Blumin M., Ruda H.E., Liu J.Q., and Kavanagh K.L. Appl. Phys. Lett. 83 (2003) 3368
4. Piccin M., Bais G., Grillo V., Jabeen F., De Franceschi S., Carlino E., Lazzarino M., Romanato F., Businaro L., Rubini S., Martelli F., and Franciosi A. Physica E 37 (2007) 134
5. Dubrovskii V.G., Cirlin G.E., Soshnikov I.P., Tonkikh A.A., Sibirev N.V., Samsonenko Yu.B., and Ustinov V.M. Phys. Rev. B 71 (2005) 205325
6. Hiruma K., Yazawa M., Katsuyama T., Ogawa K., Haraguchi K., Koguchi M., and Kakibayashi H. J. Appl. Phys. 77 (1995) 447
7. Bhunia S., Kawamura T., Watanabe Y., Fujikawa S., and Tokushima K. Appl. Phys. Lett. 83 (2003) 3371
8. Dick K.A., Deppert K., Karlsson L.S., Wallenberg L.R., Samuelson L., and Seifert W. Adv. Funct. Mater. 15 (2005) 1603
9. Wacaser B.A., Deppert K., Karlsson L.S., Samuelson L., and Seifert W. J. Cryst. Growth 287 (2006) 504
10. Bhunia S., Kawamura T., Fujikawa S., Nakashima H., Furukawa K., Torimitsu K., and Watanabe Y. Thin Solid Films 244 (2004) 464-465
11. Akiyama T., Sano K., Nakamura K., and Ito T. Jpn. J. Appl. Phys. 45 (2006) L275
12. Sano K., Akiyama T., Nakamura K., and Ito T. J. Cryst. Growth (2007) 862 301/302
13. Hiraki A. J. Electrochem. Soc. 127 (1980) 2662
14. Nakayama T., Itaya S., and Murayama D. J. Phys. Conf. Ser. 38 (2006) 216
15. Perdew J.P., Burke K., and Ernzerhof M. Phys. Rev. Lett. 77 (1996) 3865
16. Troullier N., and Martins J.L. Phys. Rev. B 43 (1991) 1993
17. Louie S.G., Froyen S., and Cohen M.L. Phys. Rev. B 26 (1982) 1738
18. Yamauchi J., Tsukada M., Watanabe S., and Sugino O. Phys. Rev. B 54 (1996) 5586
19. Kageshima H., and Shiraishi K. Phys. Rev. B 56 (1997) 14985
20. Ito T. Jpn. J. Appl. Phys. 37 (1998) 1217