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Volumn 44, Issue 10, 2008, Pages 1033-1040

A mechanism of quasi-one-dimensional vapor phase growth of Si and GaP whiskers

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EID: 53849138012     PISSN: 00201685     EISSN: 16083172     Source Type: Journal    
DOI: 10.1134/S0020168508100014     Document Type: Article
Times cited : (15)

References (20)
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    • R.S. Wagner W.C. Ellis 1964 Vapour-Liquid-Solid Mechanism of Single Crystal Growth Appl. Phys. Lett. 4 5 89 90
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  • 5
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    • S.M. Roper S.H. Davis S.A. Norris A.A. Golovin 2007 Steady Growth of Nanowires via the Vapor-Liquid-Solid Method J. Appl. Phys. 102 034304 1 7
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  • 7
    • 19944379818 scopus 로고    scopus 로고
    • Diameter-Dependent Growth Direction of Epitaxial Silicon Nanowires
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    • V. Schmidt S. Senz U. Gosele 2005 Diameter-Dependent Growth Direction of Epitaxial Silicon Nanowires Nano Lett. 5 5 931 935
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    • Rate of VLS Whisker Growth and the Role of Surface Energy
    • 1
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    • V.A. Nebol'sin A.A. Shchetinin 2003 Role of Surface Energy in the Vapor-Liquid-Solid Growth of Silicon Neorg. Mater. 39 9 1050 1055 [Inorg. Mater. (Engl. Transl.), vol. 39, no. 9, pp. 899-903]
    • (2003) Neorg. Mater. , vol.39 , pp. 1050-1055
    • Nebol'Sin, V.A.1    Shchetinin, A.A.2
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    • Temperature Effect on the Growth Rate of Silicon Whiskers
    • (XII All-Union Conf. on Crystal Growth)
    • A.A. Shchetinin V.A. Nebol'sin 1988 Temperature Effect on the Growth Rate of Silicon Whiskers XII Vsesoyuznaya konferentsiya po rostu kristallov 1 216 217 (XII All-Union Conf. on Crystal Growth)
    • (1988) XII Vsesoyuznaya Konferentsiya Po Rostu Kristallov , vol.1 , pp. 216-217
    • Shchetinin, A.A.1    Nebol'Sin, V.A.2
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    • On the Thermodynamic Equilibrium at a Three-Phase Line of Contact
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    • Growth and Characterization of Defect Free GaAs Nanowires
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.