Solid-phase diffusion mechanism for GaAs nanowire growth

Nature Materials

Volumn 3, Issue 10, 2004, Pages 677-681

  Persson, Ann I ^a   Larsson, Magnus W ^a   Stenström, Stig ^a   Ohlsson, B Jonas ^a   Samuelson, Lars ^a   Wallenberg, L Reine ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; CRYSTAL WHISKERS; DIFFUSION; ELECTRON TUNNELING; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES; SOLID-PHASE DIFFUSION; VAPOR-LIQUID-SOLID (VLS) GROWTH MECHANISM;

NANOSTRUCTURED MATERIALS;

ARSENIC; GALLIUM; GOLD;

ARTICLE; ELECTRON MICROSCOPY; MATERIALS; NANOTECHNOLOGY;

ARSENIC; GALLIUM; GOLD; MANUFACTURED MATERIALS; MICROSCOPY, ELECTRON; NANOTECHNOLOGY;

EID: 5444245579     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat1220     Document Type: Article

References (21)

1. Haraguchi, K., Katsuyama, T., Hiruma, K. & Ogawa, K. GaAs p-n junction formed in quantum wire crystals. Appl. Phys. Lett. 60, 745-747 (1992).
2. Björk, M. T. et al. Nanowire resonant tunneling diodes. App. Phys. Lett. 81, 4458-4460 (2002).
3. Thelander, C. et al. Single-electron transistors in heterostructure nanowires. Appl. Phys. Lett. 83, 2052-2054 (2003).
4. Wagner, R. S. in Whisker Technology (ed. Levitt, A. P.) 47-119 ( Wiley. New York, 1970)
5. Hiruma, K. et al. Growth and optical properties of nanometer-scale GaAs and InAs whiskers. J. Appl. Phys. 77, 447-462 (1995).
6. Duan, X. & Lieber, C. M. General synthesis of compound semiconductor nanowires. Adv. Mater. 12, 298-302 (2000).
7. Duan, X. & Libber, C. M. Laser-assisted catalytic growth of single crystal GaN nanowires. J. Am. Chem. Soc. 122, 188-189 (2000).
8. Ohlsson, B. J. et al. Size-, shape-, and position-controlled GaAs nano-wh iskers. Appl. Phys. Lett. 79, 3335-3337 (2001).
9. Kamins, T. I., Stanley Williams, R., Basile, D. P., Hesjedal, T. & Harris, J. S. Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms. J. Appl. Phys. 89, 1008-1016 (2001).
10. Ohlsson, B. J. et al. Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures. Physica E13, 1126-1130 (2002).
11. Buffat, P. & Borel, J.-P. Size effect on the melting temperature of gold particles. Phys. Rev. A 13, 2287-2298 (1976).
12. Björk, M. T. et al. One-dimensional steeplechase for electrons realized. Nano Lett. 2, 87-89 (2002).
13. Gudiksen, M. S., Lauhon, L. J., Wang, J., Smith, D. S. & Lieber, C. M. Growth of nanowires superlattice structures for nanoscale photonics and electronics. Nature 415, 617-620 (2002).
14. Wu, Y., Fan, R. & Yang, P. Block-by-block growth of single-crystalline Si/SiGe superlattice nanowires. Nano Lett. 2, 83-86 (2002).
15. Baker, R. T. K. Catalytic growth of carbon filaments. Carbon 27, 315-323 (1989).
16. Helveg, S. et al. Atomic-scale imaging of carbon nanofibre growth. Nature 427, 426-429 (2004).
17. Massalski, T. B. (ed.) Binary Alloy Phase Diagrams 2nd edn Vol. 1 369-371 (ASM International, Materials Park, Ohio, 1990).
18. Gupta, R. P., Khokle, W. S., Wuerfl, J. & Hartnagel, H. L. Diffusion of gallium in thin gold films on GaAs. Thin Solid Films. 151, L121-L125 (1987).
19. Massalski, T. B. (ed.) Binary Alloy Phase Diagrams 1st edn Vol. 1191-192 (ASM International, Metals Park, Ohio, 1986).
20. Magnusson, M. H., Deppert, K., Malm, J.-O., Bovin, J.-O. & Samuelson, L. Gold nanoparticles: production, reshaping, and thermal charging. J. Nanoparticle Res. 1, 243-251 (1999).
21. Bakkers, E. & Verheijen.M. A. Synthesis of InP nanorubes. J. Am. Chem. Soc. 125, 3440-3441 (2003).