The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors

Nanotechnology

Volumn 21, Issue 20, 2010, Pages

  Thelander, C ^a   Dick, K A ^a   Borgstrom M T ^a   Froberg L E ^a   Caroff, P ^b   Nilsson, H A ^a   Samuelson, L ^a  

^a LUND UNIVERSITY   (Sweden)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DOPING; CARBON INCORPORATION; CRYSTAL QUALITIES; DOPANT PRECURSORS; ELECTRICAL AND STRUCTURAL PROPERTIES; ELECTRICAL MEASUREMENT; HIGH FLOW; INAS; LAYER GROWTH; LOW RESISTIVITY; METAL ORGANIC PRECURSORS; N-DOPED; PRECURSOR FLOW; PRECURSOR RATIOS; STACKING FAULT DENSITY; WURTZITES; ZINC BLENDE CRYSTAL STRUCTURE;

CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRIC PROPERTIES; NANOWIRES; SEMICONDUCTING INDIUM; TIN; ZINC; ZINC SULFIDE;

ELECTRIC WIRE;

CARBON; INDIUM; INDIUM ARSENIDE; METAL; METAL NANOPARTICLE; NANOWIRE; ORGANIC COMPOUND; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTROCHEMISTRY; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; ORGANIC CHEMISTRY; TEMPERATURE;

ARSENICALS; CARBON; CHEMISTRY, ORGANIC; CRYSTALLIZATION; ELECTROCHEMISTRY; INDIUM; MATERIALS TESTING; METAL NANOPARTICLES; METALS; NANOTECHNOLOGY; NANOWIRES; ORGANIC CHEMICALS; TEMPERATURE;

EID: 77951605008     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/20/205703     Document Type: Article

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