Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 420-426

  Yang, Jianan ^a   Neudeck, Gerold W ^a   Denton, John P ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL REGION; DEVICE CHANNEL; DRIVE CURRENTS; ELECTRICAL EFFECTS; FULLY DEPLETED; IV CHARACTERISTICS; LATERAL OVERGROWTH; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; OFF-STATE LEAKAGE CURRENT; PHYSICAL MODEL; SELECTIVE EPITAXIAL GROWTH; SILICON ON INSULATOR; SILICON-ON-INSULATORS; SIMPLE METHOD; SOI-MOSFETS; THRESHOLD VOLTAGE SHIFTS;

DIELECTRIC MATERIALS; EPITAXIAL GROWTH; LEAKAGE CURRENTS; MODELS; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

STACKING FAULTS;

EID: 0036138371     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1417995     Document Type: Article

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