Stacking-faults-free zinc blende GaAs nanowires

Nano Letters

Volumn 9, Issue 1, 2009, Pages 215-219

  Shtrikman, Hadas ^a,c   Popovita Biro, Ronit ^b,c   Kretinin, Andrey ^a,c   Heiblum, Moty ^a,c  

^a Braun Center for Submicron Research   (Israel)

^b Electron Microscopy Unit   (Malaysia)

^c WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE DISTRIBUTIONS; GAAS; GROWTH METHODS; GROWTH SURFACES; VAPOR LIQUID SOLIDS; WURTZITE STRUCTURES; ZINC BLENDES;

CRYSTAL GROWTH; ELECTRIC WIRE; GALLIUM ALLOYS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOWIRES; SEMICONDUCTING GALLIUM; SOIL CONSERVATION; ZINC; ZINC SULFIDE;

STACKING FAULTS;

GALLIUM; GALLIUM ARSENIDE; NANOTUBE; ORGANOARSENIC DERIVATIVE; ZINC;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; GALLIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SURFACE PROPERTIES; ZINC;

EID: 61649108841     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl8027872     Document Type: Article

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