Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy

Nanotechnology

Volumn 17, Issue 16, 2006, Pages 4025-4030

  Tchernycheva, M ^a   Harmand, J C ^a   Patriarche, G ^a   Travers, L ^a   Cirlin, G E ^b,c  

^a UNIV PARIS SUD   (France)

^b IOFFE INSTITUTE   (Russian Federation)

^c INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; CRYSTAL STRUCTURE; GOLD COMPOUNDS; GROWTH KINETICS; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM; SOLIDIFICATION;

CATALYST SOLIDIFICATION TEMPERATURE; GAAS NANOWIRES; GOLD PARTICLES; NANOWIRE MORPHOLOGY;

NANOSTRUCTURED MATERIALS;

EID: 33748889754     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/16/005     Document Type: Article

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