GaAs core-shell nanowires for photovoltaic applications

Nano Letters

Volumn 9, Issue 1, 2009, Pages 148-154

  Czaban, Josef A ^a   Thompson, David A ^a   LaPierre, Ray R ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CELL GROWTH; CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC WIRE; GALLIUM ALLOYS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOWIRES; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR JUNCTIONS; SURFACE ACTIVE AGENTS;

CORE SHELLS; CORE-SHELL NANOWIRES; GAAS; N-TYPE DOPANTS; OPERATING CHARACTERISTICS; P-N JUNCTIONS; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC DEVICES; RADIAL GROWTHS; SIGNIFICANT IMPACTS; SOLAR CELL EFFICIENCIES; SURFACTANT EFFECTS; VAPOR-LIQUID-SOLID PROCESS;

SEMICONDUCTING GALLIUM;

GALLIUM; GALLIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTROCHEMISTRY; LIGHT; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOCHEMISTRY; POWER SUPPLY; RADIATION EXPOSURE; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; ELECTRIC POWER SUPPLIES; ELECTROCHEMISTRY; GALLIUM; LIGHT; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOCHEMISTRY;

EID: 61649114519     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl802700u     Document Type: Article

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