Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires

Applied Physics Letters

Volumn 94, Issue 13, 2009, Pages

  Hoang, Thang B ^a,b   Moses, A F ^a   Zhou, H L ^a   Dheeraj, D L ^a   Fimland, B O ^a   Weman, H ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b INSTITUTE OF MATERIALS SCIENCE   (Viet Nam)

Author keywords

[No Author keywords available]

Indexed keywords

FREE EXCITONS; GAAS; IN-BETWEEN; LOW DENSITIES; LOWER ENERGIES; MICRO PHOTOLUMINESCENCES; NON-RADIATIVE DEFECTS; PHOTOLUMINESCENCE EMISSIONS; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; WURTZITE; WURTZITE STRUCTURES; ZINC BLENDES;

CRYSTAL GROWTH; ELECTRIC WIRE; EXCITONS; GALLIUM ALLOYS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOWIRES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; ZINC; ZINC SULFIDE;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 64149097171     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3104853     Document Type: Article

References (13)

1. F. Glas, J. C. Harmand, and G. Patriarche, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.99.146101 99, 146101 (2007).
2. M. McMahon and R. Nelmes, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett. 95.215505 95, 215505 (2005).
3. A. Mishra, L. Titova, T. Hoang, H. Jackson, L. Smith, J. M. Y-Rice, Y. Kim, H. Joyce, Q. Gao, H. Tan, and C. Jagadish, Appl. Phys. Lett. 0003-6951 10.1063/1.2828034 91, 263104 (2007).
4. M. Murayama and T. Nakayama, Phys. Rev. B 0163-1829 10.1103/PhysRevB.49. 4710 49, 4710 (1994).
5. P. Caroff, K. A. Dick, J. Johansson, M. E. Messing, K. Deppert, and L. Samuelson, Nat. Nanotechnol. 1748-3387 10.1038/nnano.2008.359 4, 50 (2009).
6. D. L. Dheeraj, G. Patriarche, H. Zhou, T. B. Hoang, A. F. Moses, S. Grønsberg, A. T. J. van Helvoort, B. O. Fimland, and H. Weman, Nano Lett. 1530-6984 10.1021/nl802406d 8, 4459 (2008).
7. F. Martelli, M. Piccin, G. Bais, F. Jabeen, S. Ambrosini, S. Rubini, and A. Franciosi, Nanotechnology 0957-4484 10.1088/0957-4484/18/12/125603 18, 125603 (2007).
8. M. Moewe, L. Chuang, S. Crankshaw, C. Chase, and C. Chang-Hasnain, Appl. Phys. Lett. 93, 023116 (2008).
9. C. -Y. Yeh, S. Lu, S. Froyen, and A. Zunger, Phys. Rev. B 0163-1829 10.1103/PhysRevB.46.10086 46, 10086 (1992).
10. L. Titova, T. Hoang, H. Jackson, L. Smith, J. Yarrison-Rice, Y. Kim, H. Joyce, H. Tan, and C. Jagadish, Appl. Phys. Lett. 0003-6951 10.1063/1.2364885 89, 173126 (2006).
11. T. Tran, W. Park, W. Tong, M. Kyi, B. Wagner, and C. Summers, J. Appl. Phys. 0021-8979 10.1063/1.363937 81, 2803 (1997).
12. M. Cardona, T. Meyer, and M. Thewalt, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.92.196403 92, 196403 (2004).
13. A. Chiari, M. Colocci, F. Fermi, Y. Li, R. Querzoli, A. Vinattieri, and W. Zhuang, Phys. Status Solidi B 0370-1972 10.1002/pssb.2221470148 147, 421 (1988).