Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process

Nano Letters

Volumn 7, Issue 4, 2007, Pages 921-926

  Joyce, Hannah J ^a   Gao, Qiang ^a   Tan, H Hoe ^a   Jagadish, Chennupati ^a   Kim, Yong ^b   Zhang, Xin ^c   Guo, Yanan ^c   Zou, Jin ^c  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b Dong A University   (South Korea)

^c UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; EPITAXIAL GROWTH; HIGH TEMPERATURE OPERATIONS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE;

GOLD NANOPARTICLES; RADIAL GROWTH; TWINNING DEFECTS;

NANOWIRES;

GALLIUM; GALLIUM ARSENIDE; NANOTUBE; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRICITY; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; TEMPERATURE; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; ELECTRIC WIRING; GALLIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SEMICONDUCTORS; SURFACE PROPERTIES; TEMPERATURE;

EID: 34248191178     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl062755v     Document Type: Article

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