Structural, compositional, and optical characterizations of vertically aligned AlAs/GaAs/GaP heterostructure nanowires epitaxially grown on Si substrate

Japanese Journal of Applied Physics

Volumn 49, Issue 1 Part 1, 2010, Pages

  Zhang, Guoqiang ^a   Tateno, Kouta ^a   Gotoh, Hideki ^a   Sogawa, Tetsuomi ^a   Nakano, Hidetoshi ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENGINEERING; CAPPING LAYER; COLLOIDAL NANOPARTICLES; COLUMNAR STRUCTURES; DECAY TIME; EPITAXIALLY GROWN; EXCITONIC EMISSION; GAAS; HETEROSTRUCTURES; HIGH STRAINS; IONICITIES; NANO SCALE; NONRADIATIVE RECOMBINATION RATES; OPTICAL CHARACTERIZATION; OPTICALLY ACTIVE MATERIAL; OUTER SHELLS; PASSIVATION EFFECT; SI SUBSTRATES; SI-BASED; SOURCE MATERIAL; STACKING FAULT ENERGIES; SURFACE STATE; VAPOR-LIQUID-SOLID; VERTICALLY ALIGNED; WURTZITE CRYSTAL STRUCTURE; ZINC-BLENDE;

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); GALLIUM ARSENIDE; GOLD; HETEROJUNCTIONS; LATTICE MISMATCH; NANOWIRES; PASSIVATION; SEMICONDUCTING GALLIUM; SILICON; STACKING FAULTS; SURFACES; ZINC; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 77950839205     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.015001     Document Type: Article

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