Crystallographic structure of inas nanowires studied by transmission electron microscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 45-49, 2007, Pages

  Tomioka, Katsuhiro ^a   Motohisa, Junichi ^a   Hara, Shinjiroh ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

InAs; MOVPE; Nanowire; Selective area growth; Transmission electron microscope

Indexed keywords

ATOMIC PHYSICS; ATOMS; CRYSTAL GROWTH; DIFFRACTION; ELECTRIC WIRE; ELECTRON MICROSCOPES; ELECTRONS; HOLOGRAPHIC INTERFEROMETRY; INDIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; MICROSCOPIC EXAMINATION; NANOSTRUCTURED MATERIALS; NANOWIRES; PHASE TRANSITIONS; POWDERS; SEMICONDUCTING INDIUM; SINGLE CRYSTALS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDE;

ATOMIC LAYERS; CRYSTAL PHASE TRANSITIONS; CRYSTAL PHASES; CRYSTALLOGRAPHIC STRUCTURES; ELECTRON DIFFRACTION PATTERNS; GROWTH DIRECTIONS; INAS; METALORGANIC; MOVPE; SELECTIVE-AREA GROWTH; STACKING; STATISTICAL ANALYSIS; TEM IMAGES; TRANSMISSION ELECTRON MICROSCOPE; WURTZITE; ZINCBLENDE;

NANOSTRUCTURES;

EID: 51249121239     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L1102     Document Type: Article

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