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Volumn 102, Issue 6, 2007, Pages

Surface influence on stability and structure of hexagon-shaped III-V semiconductor nanorods

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; FREE ENERGY; PASSIVATION; SEMICONDUCTOR MATERIALS; SURFACE RELAXATION;

EID: 34848837614     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2783899     Document Type: Article
Times cited : (73)

References (40)
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    • Usually with a liquid metal seed particle and based on solid phase diffusion.
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    • Only the positions of the passivating pseudohydrogen atoms are relaxed until the Hellmann-Feynman forces are less than 20 meV Å.
    • Only the positions of the passivating pseudohydrogen atoms are relaxed until the Hellmann-Feynman forces are less than 20 meV Å.
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    • 0163-1829 10.1103/PhysRevB.38.7649
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    • Exactly the same behavior can be observed at stoichiometric surfaces of III-V semiconductors, where the free surface energy is independent of the individual chemical potentials μIII and μV.
    • Exactly the same behavior can be observed at stoichiometric surfaces of III-V semiconductors, where the free surface energy is independent of the individual chemical potentials μIII and μV.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.