|
Volumn 298, Issue SPEC. ISS, 2007, Pages 625-630
|
MOVPE growth and real structure of vertical-aligned GaAs nanowires
|
Author keywords
A1. Nanostructures; A3. Metal organic vapor phase epitaxy; B2. Semiconducting gallium arsenide
|
Indexed keywords
LITHOGRAPHY;
METALLORGANIC VAPOR PHASE EPITAXY;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
TRANSMISSION ELECTRON MICROSCOPY;
CRYSTALLOGRAPHIC MODELS;
GROWTH PARAMETERS;
GROWTH RATE;
NANOSPHERE LITHOGRAPHY;
NANOSTRUCTURED MATERIALS;
|
EID: 33846404897
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.10.082 Document Type: Article |
Times cited : (42)
|
References (18)
|