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Volumn 298, Issue SPEC. ISS, 2007, Pages 625-630

MOVPE growth and real structure of vertical-aligned GaAs nanowires

Author keywords

A1. Nanostructures; A3. Metal organic vapor phase epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

LITHOGRAPHY; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

EID: 33846404897     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.082     Document Type: Article
Times cited : (42)

References (18)
  • 14
    • 33846403606 scopus 로고    scopus 로고
    • J. Bauer, V. Gottschalch, B. Fuhrmann, in preparation.
  • 15
    • 33846415346 scopus 로고    scopus 로고
    • J. Bauer, V. Gottschalch, G. Wagner, in preparation.
  • 16
    • 33846454601 scopus 로고    scopus 로고
    • G. Stringfellow, Organometallic Vapor-Phase Epitaxy, second ed., Academic Press, San Diego, 1999, p. 47.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.