Controlled polytypic and twin-plane superlattices in III-V nanowires

Nature Nanotechnology

Volumn 4, Issue 1, 2009, Pages 50-55

  Caroff, P ^a   Dick, K A ^a   Johansson, J ^a   Messing, M E ^a   Deppert, K ^a   Samuelson, L ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; DEFECTS; ELECTRON TRANSPORT PROPERTIES; III-V SEMICONDUCTORS; INDIUM ARSENIDE; NANOWIRES; QUANTUM CHEMISTRY; QUANTUM OPTICS;

BAND GAP ENGINEERING; BINARY SEMICONDUCTORS; BIOLOGICAL SENSING; ELECTRON TRANSPORT; NANOWIRE GROWTH; RANDOMLY DISTRIBUTED; SEMICONDUCTOR NANOWIRE; SINGLE NANOWIRES;

CRYSTAL STRUCTURE;

NANOWIRE;

ARTICLE; CONTROLLED STUDY; CRYSTAL STRUCTURE; DENSITY; DRUG TRANSPORT; ELECTRIC ACTIVITY; ELECTRON TRANSPORT; MOLECULAR ELECTRONICS; NANOENGINEERING; PRIORITY JOURNAL; SEMICONDUCTOR; TEMPERATURE;

EID: 58149269212     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2008.359     Document Type: Article

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