Paired twins and {112̄} morphology in GaP nanowires

Nano Letters

Volumn 10, Issue 7, 2010, Pages 2349-2356

  Algra, Rienk E ^a,b,c   Verheijen, Marcel A ^b   Feiner, Lou Fé ^b,d   Immink, George G W ^b   Theissmann, Ralf ^e   Van Enckevort, Willem J P ^c   Vlieg, Elias ^c   Bakkers, Erik P A M ^b,e  

^a MATERIALS INNOVATION INSTITUTE M2I   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^d UNIVERSITY OF DUISBURG ESSEN   (Germany)

^e EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

GaP; Nanowire; Pair; Twin plain; Twinning; VLS

Indexed keywords

GAP; KEY ELEMENTS; NUCLEATION MODELS; PLANAR DEFECT; RANDOM POSITION; TWIN PLANES; VAPOR-LIQUID-SOLID GROWTH; ZINC-BLENDE;

CRYSTAL STRUCTURE; GALLIUM ALLOYS; MORPHOLOGY; ZINC;

NANOWIRES;

EID: 77955340333     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl1000136     Document Type: Article

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32. {111}/a D α L / D, where L = Nh is the distance between the growth interface and the position where the cross-section is hexagonal. Note that this relation between deformation and nanowire height is purely a matter of geometry, unrelated to the growth mechanism.