Structural transition in indium phosphide nanowires

Nano Letters

Volumn 10, Issue 5, 2010, Pages 1699-1703

  Kitauchi, Yusuke ^a   Kobayashi, Yasunori ^a   Tomioka, Katsuhiro ^a,b   Hara, Shinjiro ^a   Hiruma, Kenji ^a   Fukui, Takashi ^a   Motohisa, Junichi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Crystal structure; Nanowire; Photoluminescence; Selective area metalorganic vapor phase epitaxy

Indexed keywords

ATOMIC ARRANGEMENT; CATALYST-FREE GROWTH; GROWTH BEHAVIOR; GROWTH CONDITIONS; HEXAGONAL CROSS-SECTIONS; INDIUM PHOSPHIDE NANOWIRES; INP; INP SUBSTRATES; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; PHOTOLUMINESCENCE MEASUREMENTS; SELECTIVE-AREA METALORGANIC VAPOR PHASE EPITAXY; STRUCTURAL TRANSITIONS; UNIFORM ARRAY;

CRYSTAL GROWTH; INDIUM PHOSPHIDE; METALLORGANIC VAPOR PHASE EPITAXY; NANOWIRES; PHOTOLUMINESCENCE; VAPORS;

CRYSTAL ATOMIC STRUCTURE;

INDIUM; INDIUM PHOSPHIDE; NANOMATERIAL; PHOSPHINE DERIVATIVE;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; MACROMOLECULE; PARTICLE SIZE; PHASE TRANSITION; SURFACE PROPERTY; ULTRASTRUCTURE;

COMPUTER SIMULATION; INDIUM; MACROMOLECULAR SUBSTANCES; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; PHASE TRANSITION; PHOSPHINES; SURFACE PROPERTIES;

EID: 77952348294     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl1000407     Document Type: Article

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