Progress in rare earth doped Hf-based high-k gate dielectrics

Wuli Xuebao/Acta Physica Sinica

Volumn 60, Issue 1, 2011, Pages

  Zheng, Xiao Hu ^a   Huang, An Ping ^a   Yang, Zhi Chao ^a   Xiao, Zhi Song ^a   Wang, Mei ^a   Cheng, Guo An ^b  

^a BEIHANG UNIVERSITY   (China)

^b BEIJING NORMAL UNIVERSITY   (China)

Author keywords

Effective work function; Hf based high k gate dielectrics; Oxygen vacancies; Rare earth doping

Indexed keywords

EID: 79952515392     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

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