Effect of Al incorporation in the thermal stability of atomic-layer- deposited HfO2 for gate dielectric applications

Journal of the Electrochemical Society

Volumn 154, Issue 4, 2007, Pages

  Chiou, Yan Kai ^a   Chang, Che Hao ^a   Wang, Chen Chan ^a   Lee, Kun Yu ^a   Wu, Tai Bor ^a   Kwo, Raynien ^a   Hong, Minghwei ^a,b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; AMORPHOUS MATERIALS; ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; HAFNIUM COMPOUNDS; PYROLYSIS; THERMODYNAMIC STABILITY;

AMORPHOUS STRUCTURE; INTERFACE TRAP DENSITY; INTERFACIAL LAYERS;

THIN FILMS;

EID: 33947173848     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2472562     Document Type: Article

References (27)

1. C. Chaneliere, J. L. Autran, R. A. B. Devine, and B. Balland, Mater. Sci. Eng., R., 22, 269 (1998).
2. R. A. McKee, F. J. Walker, and M. F. Chisholm, Phys. Rev. Lett., 81, 3014 (1998).
3. E. P. Gusev, M. Copel, E. Cartier, I. J. R. Baumvol, C. Krug, and M. A. Gribelyuk, Appl. Phys. Lett., 76, 176 (2000).
4. M. Balog, M. Schieber, S. Patai, and M. Michman, J. Cryst. Growth, 17, 298 (1972).
5. L. Kang, B. H. Lee, W. J. Qi, Y. Jeon, R. Nieh, S. Gopalan, K. Onishi, and J. C. Lee, IEEE Electron Device Lett., 21, 181 (2000).
6. Y. Ma, Y. Ono, L. Stecker, D. R. Evans, and S. T. Hsu, Tech. Dig. - Int. Electron Devices Meet., 1999, 149.
7. L. Manchanda, M. L. Green, R. B. van Dover, M. D. Morris, A. Kerber, Y. Hu, J. P. Han, P. J. Silverman, T. W. Sorsch, G. Weber et al., Tech. Dig. - Int. Electron Devices Meet., 2000, 23.
8. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys., 89, 5243 (2001).
9. High- k Dielectrics, M. Houssa, Editor, Institute of Physics, London (2004).
10. International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 2002, http://public.itrs.net.
11. M. L. Green, E. P. Gusev, R. Degraeve, and E. L. Garfunkel, J. Appl. Phys., 90, 2057 (2001).
12. V. Mikhelashvili, R. Brener, O. Kreinin, B. Meyler, J. Shneider, and G. Eisenstein, Appl. Phys. Lett., 85, 5950 (2004).
13. M.-K. Song, S.-W. Kang, and S.-W. Rhee, J. Electrochem. Soc., 152, C108 (2005).
14. Q. Li, S. J. Wang, T. H. Ng, W. K. Chim, A. C. H. Huan, and C. K. Ong, Thin Solid Films, 504, 45 (2006).
15. M.-H. Cho, K. B. Chung, H. S. Chang, and D. W. Moon, Appl. Phys. Lett., 85, 4115 (2004).
16. T. Nishimura, T. Okazawa, Y. Hoshino, and Y. Kido, J. Appl. Phys., 96, 6113 (2004).
17. T. Okada, M. Shahjahan, K. Sawada, and M. Ishida, Jpn. J. Appl. Phys., Part 1, 44, 2320 (2005).
18. M. J. Guittet, J. P. Crocombette, and M. Gautier-Soyer, Phys. Rev. B, 63, 125117 (2001).
19. J. F. Moulder, Handbook of X-ray Photoelectron Spectroscopy, 2nd ed., Physical Electronics, Eden Prairie, MN (1992).
20. J. R. Hauser and K. Ahmed, Characterization and Metrology for ULSI Technology, p. 235 (1998).
21. K. Torii, Y. Shimamoto, S. Saito, O. Tonomura, M. Hiratani, Y. Manabe, M. Caymax, and J. W. Maes, in VLSI Tech. Dig., pp. 188-189 (2002).
22. E. H. Nicollian and J. R. Brews, MOS Physics and Technology, Wiley, New York (1981).
23. E. H. Nicollian, Solid-State Electron., 16, 121 (1972).
24. T. P. Ma and R. C. Barker, Solid-State Electron., 17, 913 (1974).
25. S. Kar and W. E. Dahlke, Solid-State Electron., 15, 221 (1972).
26. E. M. Vogel, W. Kirklen Henson, C. A. Richter, and J. S. Suehle, IEEE Trans. Electron Devices, 47, 601 (2000).
27. W. J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, and T. P. Ma, IEEE Electron Device Lett., 23, 649 (2002).