SCOPUS 정보 검색 플랫폼

Volumn 90, Issue 10, 2007, Pages

Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instability

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE TRAPPING; LEAKAGE CURRENTS; MOSFET DEVICES; NITROGEN COMPOUNDS; THRESHOLD VOLTAGE;

METAL GATES; MOBILITY DEGRADATION; THRESHOLD VOLTAGE INSTABILITY;

GATE DIELECTRICS;

EID: 33947173350 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2709948 Document Type: Article

Times cited : (12)

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