Atomic layer deposition of high-permittivity Yttrium-doped Hf O2 films

Electrochemical and Solid-State Letters

Volumn 12, Issue 1, 2008, Pages

  Niinistö, Jaakko ^a,b   Kukli, Kaupo ^a,c   Sajavaara, Timo ^d   Ritala, Mikko ^a   Leskelä, Markku ^a   Oberbeck, Lars ^e   Sundqvist, Jonas ^e   Schröder, Uwe ^e  

^a UNIVERSITY OF HELSINKI   (Finland)

^b Fraunhofer Center Nanoelectronic Technologies   (Germany)

^c UNIVERSITY OF TARTU   (Estonia)

^d UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^e QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; ATOMIC PHYSICS; ATOMS; HAFNIUM; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; OZONE; OZONE WATER TREATMENT; PERMITTIVITY; PULSED LASER DEPOSITION; YTTRIUM; YTTRIUM ALLOYS;

ATOMIC LAYERS; DEPOSITED STATES; GROWTH CYCLES; PERMITTIVITY VALUES;

AMORPHOUS FILMS;

EID: 56049118914     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3020763     Document Type: Article

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