A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications

IEEE Transactions on Electron Devices

Volumn 54, Issue 2, 2007, Pages 284-290

  Yu, Xiongfei ^a,b   Yu, Mingbin ^c   Zhu, Chunxiang ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Charge trapping; Gate leakage current; High gate dielectric; Interface state density Dit; Metal gate; Mobility; MOSFETs; Thermal stability; Vth instability

Indexed keywords

CARRIER MOBILITY; CHARGE TRAPPING; GATE DIELECTRICS; LEAKAGE CURRENTS; MOSFET DEVICES; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

GATE LEAKAGE CURRENT; INTERFACE-STATE DENSITY; METAL GATE;

CMOS INTEGRATED CIRCUITS;

EID: 33847643161     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.888669     Document Type: Article

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