Improved electrical and material characteristics of HfTaO gate dielectrics with high crystallization temperature

Applied Physics Letters

Volumn 87, Issue 23, 2005, Pages 1-3

  Zhang, M H ^a   Rhee, S J ^a   Kang, C Y ^a   Choi, C H ^a   Akbar, M S ^a   Krishnan, S A ^a   Lee, T ^a   Ok, I J ^a   Zhu, F ^a   Kim, H S ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION TEMPERATURES; ELECTRON MOBILITY; MATERIAL CHARACTERISTICS;

CRYSTALLIZATION; DIELECTRIC MATERIALS; MOSFET DEVICES; TRANSISTORS;

ELECTRICAL ENGINEERING;

EID: 28444440213     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2138813     Document Type: Article

References (9)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. G. Lucovsky, J. Vac. Sci. Technol. A 19, 1553 (2001).
3. M. Houssa and M. Heyns, in High- κ Gate Dielectrics, edited by, M. Houssa, (IOP, Bristol, 2004), p. 3.
4. L. Kang, Y. Jeon, K. Onishi, B. H. Lee, W.-J. Qi, R. Nieh, S. Gopalan, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. 2000, 117.
5. S. Shanware, M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, J. McPherson, and L. Colombo, Tech. Dig. - Int. Electron Devices Meet. 2003, 939.
6. M. Koyama, A. Kaneko, T. Ino, M. Koike, Y. Kamata, R. Iijima, Y. Kamimuta, A. Takashima, M. Suzuki, C. Hongo, and S. Inumiya, Tech. Dig. - Int. Electron Devices Meet. 2002, 849.
7. C. Choi, C. S. Kang, C. Y. Kang, R. Choi, H. J. Cho, Y. H. Kim, S. J. Rhee, M. Akbar, and Jack C. Lee, VLSI Tech. 2004, 214.
8. X. Yu, C. Zhu, X. P. Wang, M. F. Li, A. Chin, A. Y. Du. W. D. Wang, and D. L. Kwong, Symp. VLSI Tech. 2004, 110.
9. S. J. Rhee, C. S. Kang, C. H. Choi, C. Y. Kang, S. Krishnan, M. Zhang, M. S. Akbar, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. 2004, 837.