Effect of Hf-N Bond on Properties of Thermally Stable Amorphous HfSiON and Applicability of this Material to Sub-50nm Technology Node LSIs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 107-110

  Koike, Masahiro ^a   Ino, Tsunehiro ^a   Kamimuta, Yuuichi ^a   Koyama, Masato ^a   Kamata, Yoshiki ^a   Suzuki, Masamichi ^a   Mitani, Yuichiro ^a   Nishiyama, Akira ^a   Tsunashima, Yoshitaka ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CHEMICAL BONDS; ELECTRON ENERGY LOSS SPECTROSCOPY; HAFNIUM COMPOUNDS; OXIDATION; PERMITTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

STRUCTURAL PROPERTIES;

LSI CIRCUITS;

EID: 0842309830     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. A. L. P. Rotondaro et al., Tech. Dig. VLSI symp.148 (2002).
2. M. Koyama et al., IEDM Tech. Dig., 849 (2002).
3. International Technology Roadmap for Semiconductors, 2001.
4. S. V. Hattangady et al., J. Vac. Sci. Technol. A 14, 3017 (1996).
5. A. D. Katnani et al., Phys. Rev. B33, 1106 (1986).
6. B. O. Johnson et al., J. Mater. Res. 1, 442 (1986).
7. P. Kroll, Phys. Rev. Lett. 90, 125501 (2003).
8. G. Chindalore, et al., Trans. Elec. Dev., 43, 643 (2000).
9. L. Rang, et al., IEDM Tech. Dig., 35 (2000).