Mobility enhancement in TaN metal-gate MOSFETs using tantalum incorporated HfO2 gate dielectric

IEEE Electron Device Letters

Volumn 25, Issue 7, 2004, Pages 501-503

  Yu, Xiòngfei ^a   Zhu, Chunxiang ^a   Li, M F ^a   Chin, Albert ^b   Yu, M B ^c   Du, A Y ^c   Kwong, Dim Lee ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); PERMITTIVITY; RAPID THERMAL ANNEALING; SILICA; TANTALUM COMPOUNDS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE VOLTAGE CHARACTERISTIC; CHARGE TRAPPING; GATE DIELECTRIC; INTERFACE STATE DENSITY; METAL GATE MOSFET; POST DEPOSITION ANNEALING; VOLTAGE STRESS;

MOSFET DEVICES;

EID: 3342952180     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.831199     Document Type: Article

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