-
1
-
-
31044455312
-
High dielectric constant gate oxides for metal oxide Si transistors
-
Robertson J. High dielectric constant gate oxides for metal oxide Si transistors. Rep. Prog. Phys. 69 (2006) 327-396
-
(2006)
Rep. Prog. Phys.
, vol.69
, pp. 327-396
-
-
Robertson, J.1
-
2
-
-
0035872897
-
High-kappa gate dielectrics: current status and materials properties considerations
-
Wilk G.D., Wallace R.M., and Anthony J.M. High-kappa gate dielectrics: current status and materials properties considerations. J. Appl. Phys. 89 (2001) 5243-5275
-
(2001)
J. Appl. Phys.
, vol.89
, pp. 5243-5275
-
-
Wilk, G.D.1
Wallace, R.M.2
Anthony, J.M.3
-
4
-
-
0037096520
-
First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide
-
Zhao X.Y., and Vanderbilt D. First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide. Phys. Rev. B 65 (2002) 233106
-
(2002)
Phys. Rev. B
, vol.65
, pp. 233106
-
-
Zhao, X.Y.1
Vanderbilt, D.2
-
6
-
-
35549001468
-
Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films
-
Adelmann C., Sriramkumar V., Van Elshocht S., Lehnen P., Conard T., and De Gendt S. Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films. Appl. Phys. Lett. 91 (2007) 162902
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 162902
-
-
Adelmann, C.1
Sriramkumar, V.2
Van Elshocht, S.3
Lehnen, P.4
Conard, T.5
De Gendt, S.6
-
7
-
-
33745771297
-
2 by Y addition in films grown by metal organic chemical vapor deposition
-
2 by Y addition in films grown by metal organic chemical vapor deposition. Appl. Phys. Lett. 89 (2006) 012902
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 012902
-
-
Rauwel, E.1
Dubourdieu, C.2
Hollander, B.3
Rochat, N.4
Ducroquet, F.5
Rossell, M.D.6
Van Tendeloo, G.7
Pelissier, B.8
-
8
-
-
34547842574
-
2 for sub-45-nm metal-insulator-semiconductor devices
-
2 for sub-45-nm metal-insulator-semiconductor devices. Appl. Phys. Lett. 91 (2007) 062906
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 062906
-
-
Govindarajan, S.1
Boscke, T.S.2
Sivasubramani, P.3
Kirsch, P.D.4
Lee, B.H.5
Tseng, H.H.6
Jammy, R.7
Schroder, U.8
Ramanathan, S.9
Gnade, B.E.10
-
9
-
-
41049085342
-
Thermal stability of dysprosium scandate thin films
-
Adelmann C., Van Elshocht S., Franquet A., Conard T., Richard O., Bender H., Lehnen P., and De Gendt S. Thermal stability of dysprosium scandate thin films. Appl. Phys. Lett. 92 (2008) 112902
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 112902
-
-
Adelmann, C.1
Van Elshocht, S.2
Franquet, A.3
Conard, T.4
Richard, O.5
Bender, H.6
Lehnen, P.7
De Gendt, S.8
-
10
-
-
20244386274
-
Ternary rare-earth metal oxide high-k layers on silicon oxide
-
Zhao C., Witters T., Brijs B., Bender H., Richard O., Caymax M., Heeg T., Schubert J., Afanas'ev V.V., Stesmans A., and Schlom D.G. Ternary rare-earth metal oxide high-k layers on silicon oxide. Appl. Phys. Lett. 86 (2005) 132903
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 132903
-
-
Zhao, C.1
Witters, T.2
Brijs, B.3
Bender, H.4
Richard, O.5
Caymax, M.6
Heeg, T.7
Schubert, J.8
Afanas'ev, V.V.9
Stesmans, A.10
Schlom, D.G.11
-
11
-
-
0037115685
-
2 or Si-O-N) underlayers
-
2 or Si-O-N) underlayers. J. Appl. Phys. 92 (2002) 7168-7174
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 7168-7174
-
-
Green, M.L.1
Ho, M.Y.2
Busch, B.3
Wilk, G.D.4
Sorsch, T.5
Conard, T.6
Brijs, B.7
Vandervorst, W.8
Raisanen, P.I.9
Muller, D.10
Bude, M.11
Grazul, J.12
-
13
-
-
33750100541
-
2 films on silicon oxide starting surfaces
-
2 films on silicon oxide starting surfaces. J. Electrochem. Soc. 153 (2006) F205-F209
-
(2006)
J. Electrochem. Soc.
, vol.153
-
-
Nyns, L.1
Hall, L.2
Conard, T.3
Delabie, A.4
Deweerd, W.5
Heyns, M.6
Van Elshocht, S.7
Van Hoornick, N.8
Vinckier, C.9
De Gendt, S.10
-
15
-
-
0037091477
-
Attenuated total reflection spectroscopy for infrared analysis of thin layers on a semiconductor substrate
-
Rochat N., Chabli A., Bertin F., Olivier M., Vergnaud C., and Mur P. Attenuated total reflection spectroscopy for infrared analysis of thin layers on a semiconductor substrate. J. Appl. Phys. 91 (2002) 5029-5034
-
(2002)
J. Appl. Phys.
, vol.91
, pp. 5029-5034
-
-
Rochat, N.1
Chabli, A.2
Bertin, F.3
Olivier, M.4
Vergnaud, C.5
Mur, P.6
-
16
-
-
84875122994
-
Infrared spectroscopy of high k thin layer by multiple internal reflection and attenuated total reflection
-
Rochat N., Dabertrand K., Cosnier V., Zoll V., Besson P., and Weber U. Infrared spectroscopy of high k thin layer by multiple internal reflection and attenuated total reflection. Phys. Stat. Sol. (c) (2003) 2961-2965
-
(2003)
Phys. Stat. Sol. (c)
, pp. 2961-2965
-
-
Rochat, N.1
Dabertrand, K.2
Cosnier, V.3
Zoll, V.4
Besson, P.5
Weber, U.6
-
17
-
-
41049096738
-
Growth of dysprosium-, scandium-, and hafnium-based third generation high-dielectrics by atomic vapor deposition
-
Adelmann C., Lehnen P., Van Elshocht S., Zhao C., Brijs B., Franquet A., Conard T., Roeckerath M., Schubert J., Boissière O., Lohe C., and De Gendt S. Growth of dysprosium-, scandium-, and hafnium-based third generation high-dielectrics by atomic vapor deposition. Chem. Vapor Depos. 13 (2007) 567-573
-
(2007)
Chem. Vapor Depos.
, vol.13
, pp. 567-573
-
-
Adelmann, C.1
Lehnen, P.2
Van Elshocht, S.3
Zhao, C.4
Brijs, B.5
Franquet, A.6
Conard, T.7
Roeckerath, M.8
Schubert, J.9
Boissière, O.10
Lohe, C.11
De Gendt, S.12
-
18
-
-
34249901778
-
Liquid injection MOCVD of dysprosium scandate films - deposition characteristics and high-k applications
-
Thomas R., Ehrhart P., Roeckerath M., Van Elshocht S., Rije E., Luysberg M., Boese M., Schubert J., Caymax M., and Waser R. Liquid injection MOCVD of dysprosium scandate films - deposition characteristics and high-k applications. J. Electrochem. Soc. 154 (2007) G147-G154
-
(2007)
J. Electrochem. Soc.
, vol.154
-
-
Thomas, R.1
Ehrhart, P.2
Roeckerath, M.3
Van Elshocht, S.4
Rije, E.5
Luysberg, M.6
Boese, M.7
Schubert, J.8
Caymax, M.9
Waser, R.10
-
19
-
-
24144497145
-
Thermal stability of hafnium-silicate and plasma-nitrided hafnium silicate films studied by Fourier transform infrared spectroscopy
-
Quevedo-Lopez M.A., Chambers J.J., Visokay M.R., Shanware A., and Colombo L. Thermal stability of hafnium-silicate and plasma-nitrided hafnium silicate films studied by Fourier transform infrared spectroscopy. Appl. Phys. Lett. 87 (2005) 012902
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 012902
-
-
Quevedo-Lopez, M.A.1
Chambers, J.J.2
Visokay, M.R.3
Shanware, A.4
Colombo, L.5
-
21
-
-
0035368541
-
-1 in infrared spectra of hydroxyl-containing silicas. Interpretation in terms of Fermi resonance
-
-1 in infrared spectra of hydroxyl-containing silicas. Interpretation in terms of Fermi resonance. J. Non-Cryst. Solids 286 (2001) 80-88
-
(2001)
J. Non-Cryst. Solids
, vol.286
, pp. 80-88
-
-
Zarubin, D.P.1
-
22
-
-
20144374779
-
Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies
-
Dubourdieu C., Roussel H., Jimenez C., Audier M., Senateur J.P., Lhostis S., Auvray L., Ducroquet F., O'Sullivan B.J., Hurley P.K., Rushworth S., and Hubert-Pfalzgraf L. Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies. Mater. Sci. Eng. B: Solid State Mater. Adv. Technol. 118 (2005) 105-111
-
(2005)
Mater. Sci. Eng. B: Solid State Mater. Adv. Technol.
, vol.118
, pp. 105-111
-
-
Dubourdieu, C.1
Roussel, H.2
Jimenez, C.3
Audier, M.4
Senateur, J.P.5
Lhostis, S.6
Auvray, L.7
Ducroquet, F.8
O'Sullivan, B.J.9
Hurley, P.K.10
Rushworth, S.11
Hubert-Pfalzgraf, L.12
-
23
-
-
0035881403
-
2 binary oxides deposited by chemical solution deposition
-
2 binary oxides deposited by chemical solution deposition. J. Appl. Phys. 90 (2001) 1801-1808
-
(2001)
J. Appl. Phys.
, vol.90
, pp. 1801-1808
-
-
Neumayer, D.A.1
Cartier, E.2
-
24
-
-
33645568375
-
2 films for microelectronic applications
-
2 films for microelectronic applications. Chem. Vapor Depos. 12 (2006) 187-192
-
(2006)
Chem. Vapor Depos.
, vol.12
, pp. 187-192
-
-
Dubourdieu, C.1
Rauwel, E.2
Millon, C.3
Chaudouet, P.4
Ducroquet, F.5
Rochat, N.6
Rushworth, S.7
Cosnier, V.8
-
25
-
-
66049103854
-
-
in WoDiM Workshop on Dielectrics in Microelectronics, Bad Saarow Berlin, 2008, personal communication
-
D. Dubourdieu, S. Van Elshocht, C. Adelmann, in WoDiM Workshop on Dielectrics in Microelectronics, Bad Saarow (Berlin), 2008, personal communication.
-
-
-
Dubourdieu, D.1
Van Elshocht, S.2
Adelmann, C.3
-
26
-
-
34249811665
-
Atomic layer deposition of hafnium silicate gate dielectric layers
-
Delabie A., Pourtois G., Caymax M., De Gendt S., Ragnarsson L.A., Heyns M., Fedorenko Y., Swerts J., and Maes J.W. Atomic layer deposition of hafnium silicate gate dielectric layers. J. Vac. Sci. Technol. A 25 (2007) 1302-1308
-
(2007)
J. Vac. Sci. Technol. A
, vol.25
, pp. 1302-1308
-
-
Delabie, A.1
Pourtois, G.2
Caymax, M.3
De Gendt, S.4
Ragnarsson, L.A.5
Heyns, M.6
Fedorenko, Y.7
Swerts, J.8
Maes, J.W.9
-
27
-
-
0035952884
-
Interfacial reactions between thin rare-earth-metal oxide films and Si substrates
-
Ono H., and Katsumata T. Interfacial reactions between thin rare-earth-metal oxide films and Si substrates. Appl. Phys. Lett. 78 (2001) 1832-1834
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 1832-1834
-
-
Ono, H.1
Katsumata, T.2
-
35
-
-
46449084587
-
Silicate formation and thermal stability of ternary rare earth oxides as high-k dielectrics
-
Van Elshocht S., Adelmann C., Conard T., Delabie A., Franquet A., Nyns L., Richard O., Lehnen P., Swerts J., and De Gendt S. Silicate formation and thermal stability of ternary rare earth oxides as high-k dielectrics. J. Vac. Sci. Technol. A 26 (2008) 724-730
-
(2008)
J. Vac. Sci. Technol. A
, vol.26
, pp. 724-730
-
-
Van Elshocht, S.1
Adelmann, C.2
Conard, T.3
Delabie, A.4
Franquet, A.5
Nyns, L.6
Richard, O.7
Lehnen, P.8
Swerts, J.9
De Gendt, S.10
-
36
-
-
49649145797
-
Vibrational-spectra of oxides with C-type rare-earth oxide structure
-
White W.B., and Keramidas V.G. Vibrational-spectra of oxides with C-type rare-earth oxide structure. Spectrochim. Acta A A28 (1972) 501
-
(1972)
Spectrochim. Acta A
, vol.A28
, pp. 501
-
-
White, W.B.1
Keramidas, V.G.2
-
38
-
-
33947670966
-
Cation charge anomalies and high-kappa dielectric behavior in DyScO3: ab initio density-functional and self-interaction-corrected calculations
-
Delugas P., Fiorentini V., Filippetti A., and Pourtois G. Cation charge anomalies and high-kappa dielectric behavior in DyScO3: ab initio density-functional and self-interaction-corrected calculations. Phys. Rev. B 75 (2007) 115126
-
(2007)
Phys. Rev. B
, vol.75
, pp. 115126
-
-
Delugas, P.1
Fiorentini, V.2
Filippetti, A.3
Pourtois, G.4
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