ALD high-k as a common gate stack solution for nano-electronics

ECS Transactions

Volumn 28, Issue 2, 2010, Pages 51-68

  Ye, P D ^a   Gu, J J ^a   Wu, Y Q ^a   Xu, M ^a   Xuan, Y ^a   Shen, T ^a   Neal, A T ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; GATE DIELECTRICS; GRAPHENE; HIGH-K DIELECTRIC; LOGIC GATES; MOSFET DEVICES; NANOELECTRONICS;

CHANNEL MATERIALS; COMMON GATES; DEVICE PERFORMANCE; INNOVATIVE STRUCTURES; NOVEL DEVICES; OXIDE ELECTRONICS; SILICON-BASED; TOP GATE;

DIELECTRIC MATERIALS;

EID: 78650538155     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3372563     Document Type: Conference Paper

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