Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors

Applied Physics Letters

Volumn 90, Issue 16, 2007, Pages

  Kim, S K ^d   Xuan, Y ^d   Ye, P D ^d   Mohammadi, S ^a,b   Back, J H ^c   Shim, Moonsub ^c  

^a Purdue University   (United States)

^b PURDUE UNIVERSITY   (United States)

^c University of Illinois at Urbana Champaign   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

GATE LEAKAGE CURRENT; OXIDE NANOTUBE; PASSIVATION LAYER;

ALUMINA; ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; LEAKAGE CURRENTS; PASSIVATION; TRANSISTORS;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 34247341802     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2724904     Document Type: Article

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