Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates

IEEE Electron Device Letters

Volumn 30, Issue 6, 2009, Pages 650-652

  Moon, J S ^a   Curtis, D ^a   Hu, M ^a   Wong, D ^a   McGuire, C ^a   Campbell, Paul M ^b   Jernigan, Glenn ^b   Tedesco, Joseph L ^b   VanMil, Brenda ^b   Myers Ward, Rachael ^b   Eddy Jr , Chip ^b   Gaskill, D Kurt ^b  

^a Hughes Aircraft Co   (United States)

^b Research Laboratory   (United States)

Author keywords

Graphene; Radio frequency (RF); Si MOSFET; Transistors

Indexed keywords

CURRENT DRIVES; DEPOSITION METHODS; EXTRINSIC TRANSCONDUCTANCE; GAIN CUTOFF FREQUENCY; GATE LENGTH; GRAPHENE; GRAPHENE LAYERS; METAL GATE; NMOSFETS; ON STATE CURRENT; RADIO FREQUENCIES; RADIO FREQUENCY (RF); RF FIELDS; SEMI-INSULATING; SI MOSFET; SIC SUBSTRATES; SMALL SIGNAL;

CUTOFF FREQUENCY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); GRAPHITE; MESFET DEVICES; MOSFET DEVICES; RADIO; RADIO WAVES; RADIOFREQUENCY SPECTROSCOPY; SEMICONDUCTING SILICON; SILICON; SILICON CARBIDE; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67649304648     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2020699     Document Type: Article

References (13)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, "Electric field effect in atomically thin carbon films," Science, vol. 306, no. 5696, pp. 666-669, Oct. 2004.
2. A. K. Geim and K. S. Novoselov, "The rise of graphene," Nat. Mater. vol. 6, no. 3, pp. 183-191, Mar. 2007.
3. S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak, and A. K. Geim, "Giant intrinsic carrier mobilities in graphene and its bilayer," Phys. Rev. Lett., vol. 100, no. 1, p. 016 602, Jan. 2008.
4. V. Perebeinos, J. Tersoff, and P. Avouris, "Electron-phonon interaction and transport in semiconducting carbon nanotubes," Phys. Rev. Lett. vol. 94, no. 8, p. 086802, Mar. 2005.
5. M. Lemme, T. J. Echtermeyer, M. Baus, and H. Kurz, "A graphene field-effect device," IEEE Electron Device Lett., vol. 28, no. 4, pp. 282-284, Apr. 2007.
6. I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, "Current saturation in zero-bandgap, top-gated graphene field-effect transistors," Nat. Nanotechnol., vol. 3, no. 11, pp. 654-659, Nov. 2008.
7. C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, "Electronic confinement and coherence in patterned epitaxial graphene," Science, vol. 312, no. 5777, pp. 1191-1196, May 2006.
8. G. Gu, S. Nie, R. M. Feenstra, R. P. Devaty, W. J. Choyke, W. K. Chan, and M. G. Kane, "Field-effect in epitaxial graphene on a silicon carbide substrate," Appl. Phys. Lett., vol. 90, no. 25, p. 253 507, Jun. 2007.
9. Y. Wu, P. D. Ye, M. A. Capano, T. Shen, Y. Xuan, Y. Sui, M. Qi, and J. A. Cooper, Jr., "Epitaxially grown graphene field-effect transistors with electron mobility exceeding 1500 cm2/Vs and hole mobility exceeding 3400 cm2/Vs," in Proc. ISDRS, 2007, pp. 1-2.
10. J. Kedzierski, P.-L. Hsu, P. Healey, P. W. Wyatt, C. L. Keast, M. Sprinkle, C. Berger, and W. A. de Heer, "Epitaxial graphene transistors on SiC substrates," IEEE Trans. Electron Devices, vol. 55, no. 8, pp. 2078-2085, Aug. 2008.
11. Z. H. Ni, W. Chen, X. F. Fan, J. L. Kuo, T. Yu, A. T. S. Wee, and Z. X. Shen, "Raman spectroscopy of epitaxial graphene on a SiC substrate," Phys. Rev. B, Condens. Matter, vol. 77, no. 11, p. 115 416, Mar. 2008.
12. Y. Xuan, Y. Q. Wu, T. Shen, M. Qi, M. A. Capano, J. A. Cooper, and P. D. Ye, "Atomic-layer-deposited nanostructures for graphene-based nanoelectronics," Appl. Phys. Lett., vol. 92, no. 1, p. 013101, Jan. 2008.
13. J.-O. Plouchart, J. Kim, J. Gross, R. Trzcinski, and K. Wu, "Scalability of SOI CMOS technology and circuit to millimeter wave performance," in CSIC Tech. Dig., 2005, pp. 121-124.