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Physical Review Letters

Volumn 100, Issue 12, 2008, Pages

Why multilayer graphene on 4H-SiC(0001̄) behaves like a single sheet of graphene

(10) Hass, J a Varchon, F b Millan Otoya J E a Sprinkle, M a Sharma, N a De Heer, W A a Berger, C a,b First, P N a Magaud, L b Conrad, E H a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MULTILAYERS; SILICON CARBIDE; STACKING FAULTS;

DIRAC POINT; GRAPHENE FILMS; MULTILAYER GRAPHENE; SINGLE SHEETS;

GRAPHITE;

EID: 41549140434 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.100.125504 Document Type: Article

Times cited : (816)

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