Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

Applied Physics Letters

Volumn 92, Issue 1, 2008, Pages

  Xuan, Y ^a   Wu, Y Q ^a   Shen, T ^a   Qi, M ^a   Capano, M A ^a   Cooper, J A ^a   Ye, P D ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CARRIER MOBILITY; GATE DIELECTRICS; GRAPHITE; GROWTH TEMPERATURE; HAFNIUM COMPOUNDS; INSULATION; NANOSTRUCTURED MATERIALS; NUCLEATION; PYROLYSIS; TRANSPORT PROPERTIES;

GRAPHENE; GRAPHENE BASED NANOELECTRONICS; HIGHLY ORDERED PYROLYTIC GRAPHITE (HOPG); METALLIC NANOSTRUCTURES; NANORIBBONS; PYROLYTIC GRAPHITE; TEMPERATURE MOBILITY;

NANOELECTRONICS;

EID: 38049080981     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2828338     Document Type: Article

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