High-performance In0.7Ga0.3As - channel MOSFETs with high- κ gate dielectrics and α-Si passivation

IEEE Electron Device Letters

Volumn 30, Issue 1, 2009, Pages 5-7

  Sun, Yanning ^a   Kiewra, Edward W ^a   de Souza, Joel P ^a   Bucchignano, James J ^a   Fogel, Keith E ^a   Sadana, Devendra K ^a   Shahidi, Ghavam G ^a  

^a IBM   (United States)

Author keywords

Si; Buried channel; III V; InGaAs; MOSFET

Indexed keywords

ARSENIC; DISPLAY DEVICES; GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); MOSFET DEVICES; PASSIVATION; SEMICONDUCTING INDIUM; SEMICONDUCTOR MATERIALS; SILICON; TRANSCONDUCTANCE;

APPLICATIONS.; BURIED CHANNEL; CHANNEL DEVICES; GATE LENGTHS; III-V; INGAAS; MOSFET; PEAK MOBILITIES; PEAK TRANSCONDUCTANCES; SI CMOS; SI LAYERS; VIRTUAL SOURCES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 58149527797     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2008827     Document Type: Article

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