p-channel Ge MOSFET by selectively heteroepitaxially grown Ge on Si

IEEE Electron Device Letters

Volumn 30, Issue 6, 2009, Pages 675-677

  Yu, Hyun Yong ^a   Ishibashi, Masato ^a,b   Park, Jin Hong ^a   Kobayashi, Masaharu ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Anneal; Dislocation; Germanium; Heteroepitaxy; Hydrogen; MOSFET; Selective growth

Indexed keywords

ANNEAL; DISLOCATION; HETEROEPITAXY; MOSFET; SELECTIVE GROWTH;

ALUMINUM; EPITAXIAL GROWTH; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HOLE MOBILITY; HYDROGEN; MONOLITHIC INTEGRATED CIRCUITS; MOSFET DEVICES; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67649306727     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2019847     Document Type: Article

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