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2 area), and in the analysis such layers are located 0.34 nm consecutively above the upper Si plane of the final SiC bilayer.
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2 area), and in the analysis such layers are located 0.34 nm consecutively above the upper Si plane of the final SiC bilayer.
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11
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The dielectric constant was assumed to be 2.7 to calculate thickness from unit area capacitance. The measured ellipsometry data are Δ = 98.37° ± 0.15° and ψ = 22.13° ± 0.12°, in a region where determination of the refractive index is uncertain. The wavelength is 6328 Å and the incident angle is 70°. Assuming a refractive index of 1.597, a thickness of 529.5 nm (a base thickness of 39.5 nm and 2 cycles of 245.0 nm) yields the least root sum square error of 1.95° at Δ = 97.62° and ψ = 20.33°. For polystyrene dielectric constant and refractive index values, see, for example, L. V. Gregor, IBM J. Res. Dev. 12, 140 (1968).
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The dielectric constant was assumed to be 2.7 to calculate thickness from unit area capacitance. The measured ellipsometry data are Δ = 98.37° ± 0.15° and ψ = 22.13° ± 0.12°, in a region where determination of the refractive index is uncertain. The wavelength is 6328 Å and the incident angle is 70°. Assuming a refractive index of 1.597, a thickness of 529.5 nm (a base thickness of 39.5 nm and 2 cycles of 245.0 nm) yields the least root sum square error of 1.95° at Δ = 97.62° and ψ = 20.33°. For polystyrene dielectric constant and refractive index values, see, for example, L. V. Gregor, IBM J. Res. Dev. 12, 140 (1968).
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unpublished
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J. Kedzierski, C. Keast, P. Wyatt, P. Healey, R. Westoff, W. de Heer, and C. Berger (unpublished).
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Kedzierski, J.1
Keast, C.2
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Healey, P.4
Westoff, R.5
de Heer, W.6
Berger, C.7
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