Quantum hall effect in a gate-controlled p-n junction of graphene

Science

Volumn 317, Issue 5838, 2007, Pages 638-641

  Williams, J R ^a   DiCarlo, L ^a   Marcus, C M ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDE; CARBON; GRAPHENE; GRAPHITE; UNCLASSIFIED DRUG;

CARBON ISOTOPE; ELECTRIC FIELD; ELECTRICAL CONDUCTIVITY; ENERGY DISSIPATION; GRAPHITE; NANOTECHNOLOGY;

ARTICLE; CONDUCTANCE; ELECTRIC FIELD; ELECTRIC RESISTANCE; ELECTRON TRANSPORT; MOLECULAR ELECTRONICS; PHYSICS; PRIORITY JOURNAL; QUANTUM MECHANICS; THEORY;

EID: 34547820166     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1144657     Document Type: Article

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28. 2 functionalization process; and D. Monsma for assistance in implementing it. Research supported in part by INDEX and by the N5F through the Harvard Nanoscale Science and Engineering Center.