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Applied Physics Letters

Volumn 95, Issue 17, 2009, Pages

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

(8) Shen, T a Gu, J J a Xu, M a Wu, Y Q a Bolen, M L a Capano, M A a Engel, L W b Ye, P D a

a PURDUE UNIVERSITY (United States)

b FLORIDA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

4H-SIC SUBSTRATE; ALUMINUM FILM; ELECTRICAL PROPERTY; EPITAXIAL GRAPHENE; GATE STACK FORMATION; HALL RESISTANCE; HIGH TEMPERATURE; HIGH-K GATE STACKS; LOW TEMPERATURES; QUANTUM HALL EFFECT; SEEDING LAYERS; SEMI-INSULATING; SHUBNIKOV-DE HAAS OSCILLATIONS; SUBLIMATION PROCESS;

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; EPITAXIAL FILMS; GRAPHITE; GYRATORS; HALL EFFECT; LOGIC GATES; MAGNETIC FIELD EFFECTS; SHUBNIKOV-DE HAAS EFFECT; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350726176 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3254329 Document Type: Article

Times cited : (116)

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