New insight into fermi-level unpinning on GaAs: Impact of different surface orientations

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Xu, M ^a   Xu, K ^a   Contreras, R ^b   Milojevic, M ^b   Shen, T ^a   Koybasi, O ^a   Wu, Y Q ^a   Wallace, R M ^b   Ye, P D ^a  

^a PURDUE UNIVERSITY   (United States)

^b The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SURFACES; FERMI LEVEL PINNING; FERMI-LEVEL UNPINNING; GAAS; GAAS(1 0 0); INTERFACIAL CHEMISTRY; INTRINSIC PROPERTY; NMOSFET; NMOSFETS; ORIENTATION DEPENDENT; SURFACE ORIENTATION;

DRAIN CURRENT; ELECTRON DEVICES; FERMIONS; GALLIUM ARSENIDE; MOSFET DEVICES; SEMICONDUCTING GALLIUM; SURFACE CHEMISTRY;

GALLIUM ALLOYS;

EID: 77952338136     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424269     Document Type: Conference Paper

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