-
2
-
-
85056943995
-
-
3rd ed., Pennington, NJ: The Electrochemical Society
-
Sivaram, S., K. Monnig, R. Tolles, A. Maury, and R. Leggett. In Overview of Planarization by Mechanical Polishing of Interlevel Dielectrics, Symposium on ULSI Science and Technology. 3rd ed., 606–616. Pennington, NJ: The Electrochemical Society, 1991.
-
(1991)
Overview of Planarization by Mechanical Polishing of Interlevel Dielectrics, Symposium on ULSI Science and Technology
, pp. 606-616
-
-
Sivaram, S.1
Monnig, K.2
Tolles, R.3
Maury, A.4
Leggett, R.5
-
3
-
-
85056951320
-
-
Head, N. L., R. D. Hempstead, and T. N. Kennedy. Corrosion Resistant Thin Film Head Assembly and Method for Making. U.S. Patent 4,130,847, December 19, 1978.
-
(1978)
Corrosion Resistant Thin Film Head Assembly and Method for Making
, pp. 19
-
-
Head, N.L.1
Hempstead, R.D.2
Kennedy, T.N.3
-
4
-
-
0345666984
-
The Early Days of CMP
-
Fury, M. “The Early Days of CMP” Solid State Technol. 40-5 (1997): 81–86.
-
(1997)
Solid State Technol
, vol.40
, pp. 81-86
-
-
Fury, M.1
-
5
-
-
0021405353
-
CVD Tungsten—A Solution for the Poor Step Coverage and High Contact Resistance of Aluminum
-
Brors, D. L., K. A. Monnig, J. A. Fair, W. Coney, and K. C. Saraswat. “CVD Tungsten—A Solution for the Poor Step Coverage and High Contact Resistance of Aluminum” Solid State Technol. 27 (1982): 313.
-
(1982)
Solid State Technol
, vol.27
, pp. 313
-
-
Brors, D.L.1
Monnig, K.A.2
Fair, J.A.3
Coney, W.4
Saraswat, K.C.5
-
6
-
-
85056964270
-
-
Chow, M.-F., W. L. Guthrie, and F. B. Kaufman. Method of Forming Fine Conductive Lines, Patterns and Connectors. U.S. Patent 4,702,792, October 27, 1987.
-
(1987)
Method of Forming Fine Conductive Lines, Patterns and Connectors
, pp. 27
-
-
Chow, M.-F.1
Guthrie, W.L.2
Kaufman, F.B.3
-
9
-
-
0003989035
-
-
San Diego, CA: Academic Press
-
Li, S. H., and R. O. Miller, eds. Chemical Mechanical Polishing Silicon Processing, Semiconductors and Semimetals, Vol. 63. San Diego, CA: Academic Press, 2000.
-
(2000)
Chemical Mechanical Polishing Silicon Processing, Semiconductors and Semimetals
, vol.63
-
-
Li, S.H.1
Miller, R.O.2
-
11
-
-
8644284195
-
-
Economikos, L., X. Wang, X. Sakamoto, P. Ong, M. Naujok, R. Knarr, L.Chen, et al. In Integrated Electro-Chemical Mechanical Planarization (Ecmp) for Future Generation Device Technology, International Interconnect Technology Conference, 233–235. 2004.
-
(2004)
Integrated Electro-Chemical Mechanical Planarization (Ecmp) for Future Generation Device Technology, International Interconnect Technology Conference
, pp. 233-235
-
-
Economikos, L.1
Wang, X.2
Sakamoto, X.3
Ong, P.4
Naujok, M.5
Knarr, R.6
Chen, L.7
-
12
-
-
28244466726
-
-
Wada, Y., I. Noji, I. Kobata, T. Kohama, A. Fukunaga, and M. Tsujimura. In The Enabling Solution of Cu/Low-k Planarization Technology, International Interconnect Technology Conference, 126–128. 2005.
-
(2005)
The Enabling Solution of Cu/Low-K Planarization Technology, International Interconnect Technology Conference
, pp. 126-128
-
-
Wada, Y.1
Noji, I.2
Kobata, I.3
Kohama, T.4
Fukunaga, A.5
Tsujimura, M.6
-
13
-
-
25144436315
-
Cu Planarization for ULSI Processing by Electrochemical Methods: A Review
-
Suni, I. I., and B. Du. “Cu Planarization for ULSI Processing by Electrochemical Methods: A Review” IEEE Trans. Semicond. Manufact. 18, no. 3 (2005): 341–349.
-
(2005)
IEEE Trans. Semicond. Manufact
, vol.18
, Issue.3
, pp. 341-349
-
-
Suni, I.I.1
Du, B.2
-
14
-
-
0001611894
-
The Theory and Design of Plate Glass Polishing Machines
-
Preston, F. W. “The Theory and Design of Plate Glass Polishing Machines” J. Soc Glass Technol. 11 (1927): 214–254.
-
(1927)
J. Soc Glass Technol
, vol.11
, pp. 214-254
-
-
Preston, F.W.1
-
15
-
-
0035338991
-
Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling
-
Luo, J., and D. A. Dornfeld. “Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling” IEEE Trans. Semicond. Manufact. 14, no. 2 (2001): 112.
-
(2001)
IEEE Trans. Semicond. Manufact
, vol.14
, Issue.2
, pp. 112
-
-
Luo, J.1
Dornfeld, D.A.2
-
16
-
-
0343798805
-
Linear Planarization for CMP
-
Jairath, R., A. Pant, T. Mallon, B. Withers, and W. Krusell. “Linear Planarization for CMP” Solid State Technol. 39, no. 10 (1996): 107.
-
(1996)
Solid State Technol
, vol.39
, Issue.10
, pp. 107
-
-
Jairath, R.1
Pant, A.2
Mallon, T.3
Withers, B.4
Krusell, W.5
-
17
-
-
0032278103
-
K. Holland
-
Gotkis, Y., D. Schey, S. Alamgir, J. Yang, K. Holland. In Cu CMP with Orbital Technology: Summary of the Experience, IEEE Advanced Semiconductor Manufacturing Conference, 364. 1998.
-
(1998)
Cu CMP with Orbital Technology: Summary of the Experience, IEEE Advanced Semiconductor Manufacturing Conference
, pp. 364
-
-
Gotkis, Y.1
Schey, D.2
Alamgir, S.3
Yang, J.4
-
20
-
-
85056953697
-
-
Santa Clara, CA
-
Ikenouchi, K., T. Murakami, and Y. Miyoshi. In Conference Proceedings of CMP–MIC. Santa Clara, CA, 271, 1999.
-
(1999)
Conference Proceedings of CMP–MIC
, pp. 271
-
-
Ikenouchi, K.1
Murakami, T.2
Miyoshi, Y.3
-
24
-
-
85056931950
-
-
Inc. Forest Grove Rd., Furlong, PA
-
TBW Industries, Inc. Forest Grove Rd., Furlong, PA 18925.
-
-
-
-
26
-
-
4243720760
-
-
Breivogel, J. R., L. R. Blanchard, and M. J. Prince. Polishing Pad Conditioning Apparatus for Planarization Process. U.S. Patent 5,216,843, June 8, 1993.
-
(1993)
Polishing Pad Conditioning Apparatus for Planarization Process
, pp. 8
-
-
Breivogel, J.R.1
Blanchard, L.R.2
Prince, M.J.3
-
29
-
-
85056915032
-
-
Santa Clara, CA
-
Chen, L.-J., and C. C. Diao. In A Novel In-Situ Thickness Measurement Method Using Pad Temperature Monitoring for CMP Technology, CMP–MIC Conference, 241–248. Santa Clara, CA, 1996.
-
(1996)
A Novel In-Situ Thickness Measurement Method Using Pad Temperature Monitoring for CMP Technology, CMP–MIC Conference
, pp. 241-248
-
-
Chen, L.-J.1
Diao, C.C.2
-
31
-
-
85056922520
-
-
Sandhu, G. S., L. D. Schultz, and T. T. Doan. Method for Endpoint Detection During Chemical/Me- chanical Planarization of Semiconductor Wafers. U.S. Patent 5,036,015, July 30, 1991.
-
(1991)
Method for Endpoint Detection during Chemical/Me- Chanical Planarization of Semiconductor Wafers
, pp. 30
-
-
Sandhu, G.S.1
Schultz, L.D.2
Doan, T.T.3
-
33
-
-
85056980024
-
-
Sunnyvale, CA
-
Nova Measuring Instruments Inc., 1250 Oakmead Parkway, suite 210, Sunnyvale, CA 94088-3599.
-
Oakmead Parkway, Suite 210
, pp. 1250
-
-
-
35
-
-
0028594866
-
-
San Francisco, CA
-
Jairath, R., M. Desai, M. Stell, R. Tolles, D. Scherber-Brewer. In Consumables for the Chemical Mechanical Polishing (CMP) of Dielectrics and Conductors, Conference Proceedings Matter Research Society, Vol. 337, 121–31. San Francisco, CA, 1994.
-
(1994)
Consumables for the Chemical Mechanical Polishing (CMP) of Dielectrics and Conductors, Conference Proceedings Matter Research Society
, vol.337
, pp. 121-131
-
-
Jairath, R.1
Desai, M.2
Stell, M.3
Tolles, R.4
Scherber-Brewer, D.5
-
36
-
-
85056982824
-
-
Bellevue Road, Newark, DE
-
Rohm and Haas Corporation, 451 Bellevue Road, Newark, DE 19713.
-
-
-
-
37
-
-
85056968163
-
-
Santa Clara, CA
-
0 0.35 mm CMOS Technology, CMP–MIC Proceedings, 165. Santa Clara, CA, 1998.
-
(1998)
0 0.35 Mm CMOS Technology, CMP–MIC Proceedings
, pp. 165
-
-
Li, S.1
Banvillet, H.2
Augagneur, C.3
Miller, B.4
Nabot-Henaff, M.5
Wooldridge, K.6
-
38
-
-
85056941442
-
-
Santa Clara, CA
-
Yen, B., F. Shau, W. Chiang, C. Huang, C. Yi. In Evaluation of Two Types of Tungsten Slurries for Dual Damascene, CMP–MIC Proceedings, 215. Santa Clara, CA, 1999.
-
(1999)
Evaluation of Two Types of Tungsten Slurries for Dual Damascene, CMP–MIC Proceedings
, pp. 215
-
-
Yen, B.1
Shau, F.2
Chiang, W.3
Huang, C.4
Yi, C.5
-
40
-
-
85056916852
-
-
CMP–MIC Proceedings, Santa Clara, CA
-
Philipossian, A., M. Moinpour, and A. Oehler. In An Overview of Current Issues and Future Trends in CMP Consumables. 13. CMP–MIC Proceedings, Santa Clara, CA, 1996.
-
(1996)
An Overview of Current Issues and Future Trends in CMP Consumables
, pp. 13
-
-
Philipossian, A.1
Moinpour, M.2
Oehler, A.3
-
41
-
-
57949108507
-
-
Neville M., D. Fluck, C. Hung, M. Lucarelli, and D. Scherber. Chemical Mechanical Polishing Slurry for Metal Layers. U.S. Patent 5,527,423, June 18, 1996.
-
(1996)
Chemical Mechanical Polishing Slurry for Metal Layers
, pp. 18
-
-
Neville, M.1
Fluck, D.2
Hung, C.3
Lucarelli, M.4
Scherber, D.5
-
42
-
-
85056921729
-
-
Babu, S. V., M. Hariharaputhiran, S. Ramarajan, Y. Her, and M. Mayton. In The Role of Particulate Properties in the Chemical–Mechanical Polishing of Copper, CMP–MIC Proceedings, 121. 1998.
-
(1998)
The Role of Particulate Properties in the Chemical–Mechanical Polishing of Copper, CMP–MIC Proceedings
, vol.121
-
-
Babu, S.V.1
Hariharaputhiran, M.2
Ramarajan, S.3
Her, Y.4
Mayton, M.5
-
43
-
-
85056960370
-
-
Cook, L., S. Loncki, and G. Brancaleoni. Activated Polishing Compositions. U.S. Patent 5,382,272, January 17, 1995.
-
(1995)
Activated Polishing Compositions
, pp. 17
-
-
Cook, L.1
Loncki, S.2
Brancaleoni, G.3
-
47
-
-
0026260129
-
Chemical Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects
-
Kaufman, F. B., D. B. Thompson, R. E. Broadie, M. A. Jaso, W. L. Guthrie, D. J. Pearson, and M. B. Small. “Chemical Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects” J. Electrochem. Soc 138 (1991): 3460–5.
-
(1991)
J. Electrochem. Soc
, vol.138
, pp. 3460-3465
-
-
Kaufman, F.B.1
Thompson, D.B.2
Broadie, R.E.3
Jaso, M.A.4
Guthrie, W.L.5
Pearson, D.J.6
Small, M.B.7
-
48
-
-
85056928685
-
-
Santa Clara, CA
-
Kim, H. S., T. H. Lee, S. Y. Kim, and J. S. Choi. In Performance Comparison of Consumable Materials for Tungsten Plug Chemical Mechanical Polishing Process, CMP–MIC Proceedings, 457. Santa Clara, CA, 1998.
-
(1998)
Performance Comparison of Consumable Materials for Tungsten Plug Chemical Mechanical Polishing Process, CMP–MIC Proceedings
, pp. 457
-
-
Kim, H.S.1
Lee, T.H.2
Kim, S.Y.3
-
50
-
-
0030197845
-
Stabilization of Alumina Slurries for Chemical–Mechanical Polishing of Copper
-
Luo, Q., D. Campbell, and S. V. Babu. “Stabilization of Alumina Slurries for Chemical–Mechanical Polishing of Copper” Langmuir 12 (1996): 3563.
-
(1996)
Langmuir
, vol.12
, pp. 3563
-
-
Luo, Q.1
Campbell, D.2
Babu, S.V.3
-
51
-
-
0031367264
-
Chemical–Mechanical Polishing of Copper in Alkaline Media
-
Luo, Q., D. Campbell, and S. V. Babu. “Chemical–Mechanical Polishing of Copper in Alkaline Media” Thin Solid Films 311 (1997): 177.
-
(1997)
Thin Solid Films
, vol.311
, pp. 177
-
-
Luo, Q.1
Campbell, D.2
Babu, S.V.3
-
52
-
-
85056922091
-
-
Sasaki, Y., N. Hayasaka, H. Kaneko, H. Hirabayashi, and M. Higuchi. Polishing Agent and Polishing Method Using the Same. U.S. Patent 5,770,095, June 23, 1998.
-
(1998)
Polishing Agent and Polishing Method Using the Same
, pp. 23
-
-
Sasaki, Y.1
Hayasaka, N.2
Kaneko, H.3
Hirabayashi, H.4
Higuchi, M.5
-
53
-
-
57949084454
-
-
Farkas, J., R. Jairath, M. Stell, and S. A. TzEng Method of Using Additives with Silica Based Slurries to Enhance Selectivity in Metal CMP. U.S. Patent 5,614,444, March 25, 1997.
-
(1997)
Method of Using Additives with Silica Based Slurries to Enhance Selectivity in Metal CMP
, pp. 25
-
-
Farkas, J.1
Jairath, R.2
Stell, M.3
Tzeng, S.A.4
-
54
-
-
85056933802
-
Distribution Systems for CMP: The New Challenge
-
Korman, R., and D. Capitano. “Distribution Systems for CMP: The New Challenge” J. Electron. Mater. 25 (1996): 1608.
-
(1996)
J. Electron. Mater
, vol.25
, pp. 1608
-
-
Korman, R.1
Capitano, D.2
-
57
-
-
0001417013
-
The Importance of Particle Size to the Performance of the Abrasive Particles in the CMP Process
-
Pohl, M. C., and D. C. Griffiths. “The Importance of Particle Size to the Performance of the Abrasive Particles in the CMP Process” J. Electron. Mater. 25 (1996): 1612.
-
(1996)
J. Electron. Mater
, vol.25
, pp. 1612
-
-
Pohl, M.C.1
Griffiths, D.C.2
-
58
-
-
85056964525
-
-
Santa Clara, CA
-
Gutmann, R., D. Price, J. Neyrick, C. Sainio, D. Permana, D. Duquette, and S. Murarka. In CMP of Copper–Polymer Interconnect Structures, CMP–MIC Proceedings, 251. Santa Clara, CA, 1998.
-
(1998)
CMP of Copper–Polymer Interconnect Structures, CMP–MIC Proceedings
, pp. 251
-
-
Gutmann, R.1
Price, D.2
Neyrick, J.3
Sainio, C.4
Permana, D.5
Duquette, D.6
Murarka, S.7
-
59
-
-
0031920304
-
Effect of Slurry Viscosity Modification on Oxide and Tungsten CMP
-
Grover, G. S., H. Liang, S. Ganeshkumar, and W. Fortino. “Effect of Slurry Viscosity Modification on Oxide and Tungsten CMP” Wear 214 (1998): 10.
-
(1998)
Wear
, vol.214
, pp. 10
-
-
Grover, G.S.1
Liang, H.2
Ganeshkumar, S.3
Fortino, W.4
-
60
-
-
85056914455
-
-
CMP Technology for ULSI Interconnection. Burlingame, CA: SEMICON West
-
Liu, B., S. Yoo, H. Chung, and S. Chae. Comparative Particle Size Measurement of CMP Slurries by Instrumental and Filtration Methods, CMP Technology for ULSI Interconnection. Burlingame, CA: SEMICON West, 1998.
-
(1998)
Comparative Particle Size Measurement of CMP Slurries by Instrumental and Filtration Methods
-
-
Liu, B.1
Yoo, S.2
Chung, H.3
Chae, S.4
-
62
-
-
0031235830
-
Monitoring Slurry Stability to Reduce Process Variability
-
Bare, J., and T. Lemke. “Monitoring Slurry Stability to Reduce Process Variability” Micro (1997): 53.
-
(1997)
Micro
, pp. 53
-
-
Bare, J.1
Lemke, T.2
-
63
-
-
85056982812
-
Can CMP Waste Ever Be Environmentally Friendly?
-
Corlett, G. “Can CMP Waste Ever Be Environmentally Friendly?” J. Adv. Appl. Contam. Control. 1-11 (1998): 19.
-
(1998)
J. Adv. Appl. Contam. Control
, vol.11
, pp. 19
-
-
Corlett, G.1
-
64
-
-
0032099121
-
The Environmental, Health and Safety Side of Copper Metallization
-
Mendocino, L., and P. T. Brown. “The Environmental, Health and Safety Side of Copper Metallization” Semicond. Int. (1998): 105.
-
(1998)
Semicond. Int
, pp. 105
-
-
Mendocino, L.1
Brown, P.T.2
-
65
-
-
0022864698
-
Preparation of Ultrasmooth Surfaces
-
Brown, N. “Preparation of Ultrasmooth Surfaces” Ann. Rev. Mater. Sci. 16 (1986): 371–388.
-
(1986)
Ann. Rev. Mater. Sci
, vol.16
, pp. 371-388
-
-
Brown, N.1
-
66
-
-
0020253224
-
Optical Polishing of Metals
-
Brown, N., P. Baker, and R. Maney. “Optical Polishing of Metals” Proc. SPIE 306 (1981): 42–57.
-
(1981)
Proc. SPIE
, vol.306
, pp. 42-57
-
-
Brown, N.1
Baker, P.2
Maney, R.3
-
67
-
-
85056928377
-
Paper TuB-A4
-
Optical Society of America, April
-
Brown, N., and L. Cook, Paper TuB-A4, In Technical Digest, Topical Meeting on the Science of Polishing, Optical Society of America, April 1984.
-
Technical Digest, Topical Meeting on the Science of Polishing
, pp. 1984
-
-
Brown, N.1
Cook, L.2
-
68
-
-
0029375964
-
Characterization Pf the Chemical–Mechanical Polishing Process Based on Nanoindentaation Measrement of Dielectric Films
-
Liu, C. W., B. T. Dai, and C. F. Yeh. “Characterization Pf the Chemical–Mechanical Polishing Process Based on Nanoindentaation Measrement of Dielectric Films” J. Electrochem. Soc 142 (1995): 3098–3104.
-
(1995)
J. Electrochem. Soc
, vol.142
, pp. 3098-3104
-
-
Liu, C.W.1
Dai, B.T.2
Yeh, C.F.3
-
69
-
-
0030086567
-
Modeling of the Wear Mechanism during Chemical–Mechanical Polishing
-
Liu, C. W., B. T. Dai, W. T. Tseng, and C. F. Yeh. “Modeling of the Wear Mechanism during Chemical–Mechanical Polishing” J. Electrochem. Soc 143 (1996): 716.
-
(1996)
J. Electrochem. Soc
, vol.143
, pp. 716
-
-
Liu, C.W.1
Dai, B.T.2
Tseng, W.T.3
Yeh, C.F.4
-
71
-
-
0028444787
-
Tribology Analysis of Chemical–Mechanical Polishing
-
Runnels, S. R., and L. M. Eyman. “Tribology Analysis of Chemical–Mechanical Polishing” J. Electrochem. Soc 141 (1994): 1698–1701.
-
(1994)
J. Electrochem. Soc
, vol.141
, pp. 1698-1701
-
-
Runnels, S.R.1
Eyman, L.M.2
-
72
-
-
0031075324
-
Re-Examination of Pressure and Speed Dependance of Removal Rates during Chemical–Mechanical Polishing Processes
-
Tseng, W. T., and Y. L. Wang. “Re-Examination of Pressure and Speed Dependance of Removal Rates during Chemical–Mechanical Polishing Processes” J. Electrochem. Soc 144 (1997): L15–L17.
-
(1997)
J. Electrochem. Soc
, vol.144
, pp. L15-L17
-
-
Tseng, W.T.1
Wang, Y.L.2
-
73
-
-
0032139417
-
Modeling of Chemical–Mechanical Polishing with Soft Pads
-
Shi, F. G., and B. Zhao. “Modeling of Chemical–Mechanical Polishing with Soft Pads” Appl. Phys. A 67 (1998): 249–252.
-
(1998)
Appl. Phys. A
, vol.67
, pp. 249-252
-
-
Shi, F.G.1
Zhao, B.2
-
74
-
-
77956666717
-
-
San Francisco, CA
-
Shi, F. G., B. Zhao, and S. Q. Wang. In A New Theory for CMP with Soft Pads, Conference Proceedings of IITC, 73–75. San Francisco, CA, 1998.
-
(1998)
A New Theory for CMP with Soft Pads, Conference Proceedings of IITC
, pp. 73-75
-
-
Shi, F.G.1
Zhao, B.2
-
75
-
-
0033101768
-
Chemical Mechanical Polishing: Threshold Pressure and Mechanism
-
Zhao, B., and F. G. Shi. “Chemical Mechanical Polishing: Threshold Pressure and Mechanism” Electrochem. Solid State Lett. 2 (1999): 145–147.
-
(1999)
Electrochem. Solid State Lett
, vol.2
, pp. 145-147
-
-
Zhao, B.1
Shi, F.G.2
-
76
-
-
0030730832
-
W-CMP for Sub- Micron Inverse Metalization
-
van Kranenburg, H., H. D. van Corbach, P. H. Woerlee, and M. Lohrmeier. “W-CMP for Sub- Micron Inverse Metalization” Microelectron. Eng 33 (1997): 241–248.
-
(1997)
Microelectron. Eng
, vol.33
, pp. 241-248
-
-
Van Kranenburg, H.1
Van Corbach, H.D.2
Woerlee, P.H.3
Lohrmeier, M.4
-
78
-
-
0000467901
-
Chemical–Mechanical Polishing of Copper for Interconnect Formation
-
Stavreva, Z., D. Zeidler, M. Plotner, G. Grasshoff, and K. Drescher. “Chemical–Mechanical Polishing of Copper for Interconnect Formation” Microelectron. Eng 33 (1997): 249–257.
-
(1997)
Microelectron. Eng
, vol.33
, pp. 249-257
-
-
Stavreva, Z.1
Zeidler, D.2
Plotner, M.3
Grasshoff, G.4
Drescher, K.5
-
80
-
-
0031100738
-
Van Mises Stress in Chemical– Mechanical Polishing Processes
-
Wang, J. L., K. Holland, T. Bibby, S. Beaudoin, and T. Cale. “Van Mises Stress in Chemical– Mechanical Polishing Processes” J. Electrochem. Soc 144 (1997): 1121–1127.
-
(1997)
J. Electrochem. Soc
, vol.144
, pp. 1121-1127
-
-
Wang, J.L.1
Holland, K.2
Bibby, T.3
Beaudoin, S.4
Cale, T.5
-
81
-
-
0032035936
-
Tungsten CMP Process Developed
-
Wijekoon, K., R. Lin, B. Fishkin, S. Yang, F. Redeker, G. Amico, and S. Nanjangud. “Tungsten CMP Process Developed” Solid State Technol. 4 (1998): 53–56.
-
(1998)
Solid State Technol
, vol.4
, pp. 53-56
-
-
Wijekoon, K.1
Lin, R.2
Fishkin, B.3
Yang, S.4
Redeker, F.5
Amico, G.6
Nanjangud, S.7
-
83
-
-
0026204737
-
A Two-Dimensional Process Model for Chemimechanical Polish Planarizaton
-
Warnock, J. “A Two-Dimensional Process Model for Chemimechanical Polish Planarizaton” J. Electrochem. Soc 138 (1991): 2398–2402.
-
(1991)
J. Electrochem. Soc
, vol.138
, pp. 2398-2402
-
-
Warnock, J.1
-
84
-
-
0028465918
-
Feature-Scale Fluid-Based Erosion Modeling for Chemical–Mechanical Polishing
-
Runnels, S. R. “Feature-Scale Fluid-Based Erosion Modeling for Chemical–Mechanical Polishing” J. Electrochem. Soc 141 (1994): 1900–1904.
-
(1994)
J. Electrochem. Soc
, vol.141
, pp. 1900-1904
-
-
Runnels, S.R.1
-
85
-
-
0032136169
-
Modeling Tool for Chemical– Mechanical Polishing Design and Evaluation
-
Runnels, S. R., I. Kim, J. Schleuter, C. Karlsrud, and M. Desai. “Modeling Tool for Chemical– Mechanical Polishing Design and Evaluation” IEEE Trans. Semicond. Manufact. 11 (1998): 501–510.
-
(1998)
IEEE Trans. Semicond. Manufact
, vol.11
, pp. 501-510
-
-
Runnels, S.R.1
Kim, I.2
Schleuter, J.3
Karlsrud, C.4
Desai, M.5
-
86
-
-
0027889065
-
-
Washington, DC
-
Yu, T. K., C. C. Yu, M. Orlowski. In Statistical Polishing Pad Model for Chemical–Mechanical Polishing, Technical Digest IEDM, 865–868. Washington, DC, 1993.
-
(1993)
Statistical Polishing Pad Model for Chemical–Mechanical Polishing, Technical Digest IEDM
, pp. 865-868
-
-
Yu, T.K.1
Yu, C.C.2
Orlowski, M.3
-
87
-
-
0032099606
-
Wear-Contact Problems and Modeling of Chemical Mechanical Polishing
-
Chekina, O. G., L. M. Keer, and H. Liang. “Wear-Contact Problems and Modeling of Chemical Mechanical Polishing” J. Electrochem. Soc 145 (1998): 2100–2106.
-
(1998)
J. Electrochem. Soc
, vol.145
, pp. 2100-2106
-
-
Chekina, O.G.1
Keer, L.M.2
Liang, H.3
-
88
-
-
19444365160
-
-
Santa Clara, CA
-
Tseng, E., C. Yi, and H. C. Chen. In Conference Proceedings CMP–MIC, 258. Santa Clara, CA, 1997.
-
(1997)
Conference Proceedings CMP–MIC
, pp. 258
-
-
Tseng, E.1
Yi, C.2
Chen, H.C.3
-
89
-
-
0002926296
-
-
Santa Clara, CA
-
Grillaert, J., M. Meuris, N. Heylen, K. Devriendt, E. Vrancken, and M. Heyns. In Conference Proceedings CMP–MIC, 79. Santa Clara, CA, 1998.
-
(1998)
Conference Proceedings CMP–MIC
, pp. 79
-
-
Grillaert, J.1
Meuris, M.2
Heylen, N.3
Devriendt, K.4
Vrancken, E.5
Heyns, M.6
-
90
-
-
0031077147
-
Analysis and Decomposition of Spatial Variation in Integrated Circuits Processes and Devices
-
Stine, B. E., D. S. Boning, and J. E. Chung. “Analysis and Decomposition of Spatial Variation in Integrated Circuits Processes and Devices” IEEE Trans. Semicond. Manufact. 10 (1997): 24–41.
-
(1997)
IEEE Trans. Semicond. Manufact
, vol.10
, pp. 24-41
-
-
Stine, B.E.1
Boning, D.S.2
Chung, J.E.3
-
91
-
-
0029512442
-
-
Piscataway, NJ
-
Chang, E., B. Stine, T. Maung, R. Divecha, D. Boning, J. Chung, K. Chang, et al. Using a Statistical Metrology Framework to Identify Systematic and Random Sources of Die-Level and Wafer-Level ILD Thickness Variations in CMP Processes, Technical Digest IEDM, 499–502, Piscataway, NJ, 1995.
-
(1995)
Using a Statistical Metrology Framework to Identify Systematic and Random Sources of Die-Level and Wafer-Level ILD Thickness Variations in CMP Processes, Technical Digest IEDM
, pp. 499-502
-
-
Chang, E.1
Stine, B.2
Maung, T.3
Divecha, R.4
Boning, D.5
Chung, J.6
Chang, K.7
-
92
-
-
0032000527
-
Rapid Characterization and Modeling of Pattern- Dependant Variation in Chemical–Mechanical Polishing
-
Stine, B. E., D. O. Ouma, R. R. Divecha, D. S. Boning, J. E. Chung, D. L. Hetherington, C. R. Harwood, O. S. Nakagawa, and S. Y. Oh. “Rapid Characterization and Modeling of Pattern- Dependant Variation in Chemical–Mechanical Polishing” IEEE Trans. Semicond. Manufact. 11 (1998): 129–140.
-
(1998)
IEEE Trans. Semicond. Manufact
, vol.11
, pp. 129-140
-
-
Stine, B.E.1
Ouma, D.O.2
Divecha, R.R.3
Boning, D.S.4
Chung, J.E.5
Hetherington, D.L.6
Harwood, C.R.7
Nakagawa, O.S.8
Oh, S.Y.9
-
93
-
-
78650728947
-
-
San Francisco, CA
-
Ouma, D., D. Boning, J. Chung, G. Shinn, L. Olsen, and J. Clark. In An Integrated Characterization and Modeling Methodology for CMP Dielectric Planarization. Conference Proceedings of International Interconnect Technology Conference, 67–69. San Francisco, CA, 1998.
-
(1998)
An Integrated Characterization and Modeling Methodology for CMP Dielectric Planarization. Conference Proceedings of International Interconnect Technology Conference
, pp. 67-69
-
-
Ouma, D.1
Boning, D.2
Chung, J.3
Shinn, G.4
Olsen, L.5
Clark, J.6
-
94
-
-
85056968024
-
-
Santa Clara, CA
-
Ouma, D., C. Oji, D. Boning, J. Chung, D. Hetherington, and P. Merkle. In Conference Proceedings CMP–MIC, 20. Santa Clara, CA, 1998.
-
(1998)
Conference Proceedings CMP–MIC
, pp. 20
-
-
Ouma, D.1
Oji, C.2
Boning, D.3
Chung, J.4
Hetherington, D.5
Merkle, P.6
-
95
-
-
85056930197
-
-
Santa Clara, CA
-
Fang, S. J., T. H. Smith, G. B. Shinn, J. A. Stefani, and D. S. Boning. In Advanced Process Control in Dielectric Chemical Mechanical Polishing (CMP). Conference Proceedings CMP–MIC, 367–374. Santa Clara, CA, 1999.
-
(1999)
Advanced Process Control in Dielectric Chemical Mechanical Polishing (CMP). Conference Proceedings CMP–MIC
, pp. 367-374
-
-
Fang, S.J.1
Smith, T.H.2
Shinn, G.B.3
Stefani, J.A.4
Boning, D.S.5
-
96
-
-
0005980582
-
-
Santa Clara, CA
-
Smith, T. H., S. J. Fang, D. S. Boning, G. B. Shinn, and J. A. Stefani. In Conference Proceedings CMP– MIC, 97. Santa Clara, CA, 1999.
-
(1999)
Conference Proceedings CMP– MIC
, pp. 97
-
-
Smith, T.H.1
Fang, S.J.2
Boning, D.S.3
Shinn, G.B.4
Stefani, J.A.5
-
97
-
-
0032071103
-
Tungsten Chemical Mechanical Polishing
-
Elbel, N., B. Neureither, B. Ebersberger, and P. Lahnor. “Tungsten Chemical Mechanical Polishing” J. Electrochem. Soc 145, no. 5 (1998): 1659–1664.
-
(1998)
J. Electrochem. Soc
, vol.145
, Issue.5
, pp. 1659-1664
-
-
Elbel, N.1
Neureither, B.2
Ebersberger, B.3
Lahnor, P.4
-
98
-
-
0028516105
-
Pattern Geometry Effects in the Chemical–Mechanical Polishing of Inlaid Copper Structures
-
Steigerwald, J. M., R. Zirpoli, S. P. Murarka, D. Price, and R. J. Gutmann. “Pattern Geometry Effects in the Chemical–Mechanical Polishing of Inlaid Copper Structures” J. Electrochem. Soc 141 (1994): 2842.
-
(1994)
J. Electrochem. Soc
, vol.141
, pp. 2842
-
-
Steigerwald, J.M.1
Zirpoli, R.2
Murarka, S.P.3
Price, D.4
Gutmann, R.J.5
-
100
-
-
0025417082
-
Chemical Processes in Glass Polishing
-
Cook, L. “Chemical Processes in Glass Polishing” J. Non-Cryst. Solids 120 (1990): 152–171.
-
(1990)
J. Non-Cryst. Solids
, vol.120
, pp. 152-171
-
-
Cook, L.1
-
101
-
-
0021450042
-
Diffusion of Water in High Silica Glasses as Low Temperature
-
Nogami, M., and M. Tomozawa. “Diffusion of Water in High Silica Glasses as Low Temperature” Phys. Chem. Glass. 25 (1984): 82–85.
-
(1984)
Phys. Chem. Glass
, vol.25
, pp. 82-85
-
-
Nogami, M.1
Tomozawa, M.2
-
104
-
-
0033101767
-
Chemical Mechanical Polishing of Tungsten: Effect of Tungstate Ion on the Electrochemical Behavior of Tungsten
-
Osseo-Asare, K., M. Anik, and J. DeSimone. “Chemical Mechanical Polishing of Tungsten: Effect of Tungstate Ion on the Electrochemical Behavior of Tungsten” Electrochem. Solid State Lett. 2 (1999): 143–144.
-
(1999)
Electrochem. Solid State Lett
, vol.2
, pp. 143-144
-
-
Osseo-Asare, K.1
Anik, M.2
Desimone, J.3
-
106
-
-
0029389318
-
Initial Study on Copper CMP Slurry Chemistries
-
Carpio, R., J. Farkas, and R. Jairath. “Initial Study on Copper CMP Slurry Chemistries” Thin Solid Films 266 (1995): 238–244.
-
(1995)
Thin Solid Films
, vol.266
, pp. 238-244
-
-
Carpio, R.1
Farkas, J.2
Jairath, R.3
-
107
-
-
85056979562
-
-
Santa Clara, CA
-
Luo, Q., S. V. Babu, In Conference Proceedings CMP–MIC, 83. Santa Clara, CA, 1997.
-
(1997)
Conference Proceedings CMP–MIC
, pp. 83
-
-
Luo, Q.1
Babu, S.V.2
-
108
-
-
0026943966
-
Chemical–Mechanical Polishing in CMOS Integrated Circuits
-
Landis, H., P. Burke, W. Cote, W. Hill, C. Hoffman, C. Kaanta, C. Koburger, W. Lange, M. Leach, and S. Luce. “Chemical–Mechanical Polishing in CMOS Integrated Circuits” Thin Solid Films 220 (1992): 1–7.
-
(1992)
Thin Solid Films
, vol.220
, pp. 1-7
-
-
Landis, H.1
Burke, P.2
Cote, W.3
Hill, W.4
Hoffman, C.5
Kaanta, C.6
Koburger, C.7
Lange, W.8
Leach, M.9
Luce, S.10
-
109
-
-
0001547456
-
Dishing Effects in a Chemical–Mechanical Polishing Planarization Process for Advanced Trench Isolation
-
Yu, C., C. Fazan, V. Matthews, and T. Doan. “Dishing Effects in a Chemical–Mechanical Polishing Planarization Process for Advanced Trench Isolation” Appl. Phys. Lett. 61 (1992): 1344.
-
(1992)
Appl. Phys. Lett
, vol.61
, pp. 1344
-
-
Yu, C.1
Fazan, C.2
Matthews, V.3
Doan, T.4
-
110
-
-
0024895494
-
A New Planarization Technique Using a Combination of RIE and Chemical Mechanical Polish (CMP)
-
Davari, B., C. Koburger, R. Schulz, J. Warnock, T. Furukawa, M. Jost, Y. Taur, et al. “A New Planarization Technique Using a Combination of RIE and Chemical Mechanical Polish (CMP)” IEDM Tech. Dig. (1989): 61–64.
-
(1989)
IEDM Tech. Dig
, pp. 61-64
-
-
Davari, B.1
Koburger, C.2
Schulz, R.3
Warnock, J.4
Furukawa, T.5
Jost, M.6
Taur, Y.7
-
111
-
-
0026105094
-
Planarization of ULSI Topography Over Variable Pattern Densities
-
Daubenspeck, T., J. DeBrosse, C. Koburger, M. Armacost, and J. Abernathy. “Planarization of ULSI Topography Over Variable Pattern Densities” J. Electrochem. Soc 138 (1991): 506–509.
-
(1991)
J. Electrochem. Soc
, vol.138
, pp. 506-509
-
-
Daubenspeck, T.1
Debrosse, J.2
Koburger, C.3
Armacost, M.4
Abernathy, J.5
-
112
-
-
0029376264
-
Optimization of a Shallow Trench Isolation Process for Improved Planarization
-
Cooperman, S., A. Nasar, and G. Grula. “Optimization of a Shallow Trench Isolation Process for Improved Planarization” J. Electrochem. Soc 142 (1995): 3180–3185.
-
(1995)
J. Electrochem. Soc
, vol.142
, pp. 3180-3185
-
-
Cooperman, S.1
Nasar, A.2
Grula, G.3
-
113
-
-
85056917257
-
-
Santa Clara, CA
-
Jouty, M., M. Rivoire, and T. Detzel. In The Effect of Feature Size and Counter Mask on Oxide Removal Rate in Shallow Trench Isolation, Conference Proceedings CMP–MIC, 329–332. Santa Clara, CA, 1999.
-
(1999)
The Effect of Feature Size and Counter Mask on Oxide Removal Rate in Shallow Trench Isolation, Conference Proceedings CMP–MIC
, pp. 329-332
-
-
Jouty, M.1
Rivoire, M.2
Detzel, T.3
-
114
-
-
85056947943
-
-
Santa Clara, CA
-
Lao, P., T. Tsai, S. Lin, C. Lee, E. Hsu, H. Wu, H. Chen, and L. Liu. In Characterization of Selective CMP, Dummy Pattern and Reverse Mask Approaches in STI Planarization Process, Conference Proceedings CMP–MIC, 333–335. Santa Clara, CA, 1999.
-
(1999)
Characterization of Selective CMP, Dummy Pattern and Reverse Mask Approaches in STI Planarization Process, Conference Proceedings CMP–MIC
, pp. 333-335
-
-
Lao, P.1
Tsai, T.2
Lin, S.3
Lee, C.4
Hsu, E.5
Wu, H.6
Chen, H.7
Liu, L.8
-
115
-
-
85056937702
-
-
Beyer, K., J. Makris, E. Mendel, K. Numtay, S. Ogura, J. Riseman, and N. Rovedo. Method for Removing Protuberances at the Surface of a Semiconductor Wafer Using a Chem–Mech Polishing Technique. U.S. Patent 4,671,851. June 9, 1987.
-
(1987)
Method for Removing Protuberances at the Surface of a Semiconductor Wafer Using a Chem–Mech Polishing Technique
, pp. 9
-
-
Beyer, K.1
Makris, J.2
Mendel, E.3
Numtay, K.4
Ogura, S.5
Riseman, J.6
Rovedo, N.7
-
116
-
-
84889545994
-
A One-Step Shallow Trench Global Planarization Process Using Chemical Mechanical Polishing
-
Boyd, J., and J. Ellul. “A One-Step Shallow Trench Global Planarization Process Using Chemical Mechanical Polishing” Electrochem. Soc Proc. (1995): 290–301.
-
(1995)
Electrochem. Soc Proc
, pp. 290-301
-
-
Boyd, J.1
Ellul, J.2
-
117
-
-
0002772254
-
-
Santa Clara, CA
-
Lin, M., C. Y. Chang, D. Liao, B. Wang, and A. Henderson. In Improved STI CMP Technology for Micro-Scratch Issue. Conference Proceeding CMP–MIC, 322–326. Santa Clara, CA, 1999.
-
(1999)
Improved STI CMP Technology for Micro-Scratch Issue. Conference Proceeding CMP–MIC
, pp. 322-326
-
-
Lin, M.1
Chang, C.Y.2
Liao, D.3
Wang, B.4
Henderson, A.5
-
118
-
-
85056943950
-
-
Kim, C., S. Lee, J. Kim, M. Kim, S. Hong, S. Hah, U. Chung, and M. Lee. In Selective CMP (Chemical–Mechanical Polishing) Using BN (Boron Nitride) Films to Achieve Global Planarization. Conference Proceeding VMIC, 401–406. 1996.
-
(1996)
Selective CMP (Chemical–Mechanical Polishing) Using BN (Boron Nitride) Films to Achieve Global Planarization. Conference Proceeding VMIC
, pp. 401-406
-
-
Kim, C.1
Lee, S.2
Kim, J.3
Kim, M.4
Hong, S.5
Hah, S.6
Chung, U.7
Lee, M.8
-
119
-
-
85056961206
-
-
Santa Clara, CA
-
Grillaert, J., N. Heylen, E. Vranchen, G. Badenes, R. Rooyackers, M. Meuris, and M. Heynes. In A Novel Approach for the Elimination of Pattern Density Dependence of CMP for Shallow Trench Isolation, Conference Proceedings CMP–MIC, 313. Santa Clara, CA, 1998.
-
(1998)
A Novel Approach for the Elimination of Pattern Density Dependence of CMP for Shallow Trench Isolation, Conference Proceedings CMP–MIC
, pp. 313
-
-
Grillaert, J.1
Heylen, N.2
Vranchen, E.3
Badenes, G.4
Rooyackers, R.5
Meuris, M.6
Heynes, M.7
-
120
-
-
85056979755
-
-
Santa Clara, CA
-
Choi, K. S., S. I. Lee, C. I. Kim, C. W. Nam, S. D. Kim, and C. T. Kim. In Application of Ceria-Based High Selectivity Slurry to STI CMP for sub-0.18 Micron CMOS Technologies, Conference Proceeding CMP–MIC, 307–313. Santa Clara, CA, 1999.
-
(1999)
Application of Ceria-Based High Selectivity Slurry to STI CMP for Sub-0.18 Micron CMOS Technologies, Conference Proceeding CMP–MIC
, pp. 307-313
-
-
Choi, K.S.1
Lee, S.I.2
Kim, C.I.3
Nam, C.W.4
Kim, S.D.5
Kim, C.T.6
-
121
-
-
0032028732
-
The Physical and Electrical Effects of Metal-Fill Patterning Practices for Oxide Chemical–Mechanical Polishing Processes
-
Stine, B., D. Boning, J. Chung, L. Camilletti, F. Kruppa, E. Equi, W. Loh, et al. “The Physical and Electrical Effects of Metal-Fill Patterning Practices for Oxide Chemical–Mechanical Polishing Processes” IEEE Trans. Electron. Dev. 45 (1998): 665–679.
-
(1998)
IEEE Trans. Electron. Dev
, vol.45
, pp. 665-679
-
-
Stine, B.1
Boning, D.2
Chung, J.3
Camilletti, L.4
Kruppa, F.5
Equi, E.6
Loh, W.7
-
124
-
-
0031190401
-
High Aspect Ratio Contacts: A Review of the Current Tungsten Plug Process
-
Ireland, P. J. “High Aspect Ratio Contacts: A Review of the Current Tungsten Plug Process” Thin Solid Films 304 (1997): 1–12.
-
(1997)
Thin Solid Films
, vol.304
, pp. 1-12
-
-
Ireland, P.J.1
-
125
-
-
0027559592
-
Corrosion and Protection of Thin-Line Conductors in VLSI Structures
-
Brusic, V., G. S. Frankel, C.-K. Hu, M. M. Plechaty, and G. C. Scwartz. “Corrosion and Protection of Thin-Line Conductors in VLSI Structures” IBM J. Res. Dev. 37, no. 2 (1993): 173.
-
(1993)
IBM J. Res. Dev
, vol.37
, Issue.2
, pp. 173
-
-
Brusic, V.1
Frankel, G.S.2
Hu, C.-K.3
Plechaty, M.M.4
Scwartz, G.C.5
-
126
-
-
0026205793
-
Copper Corrosion with and without Inhibitors
-
Brusic, V., M. A. Frisch, B. N. Eldridge, F. P. Novak, F. B. Kaufman, B. M. Rush, and G. S. Frankel. “Copper Corrosion with and without Inhibitors” J. Electrochem. Soc 138 (1991): 2253–9.
-
(1991)
J. Electrochem. Soc
, vol.138
, pp. 2253-2259
-
-
Brusic, V.1
Frisch, M.A.2
Eldridge, B.N.3
Novak, F.P.4
Kaufman, F.B.5
Rush, B.M.6
Frankel, G.S.7
-
127
-
-
0015416303
-
Structure of Electroplated and Vapor-Deposited Copper Films. II. Effects of Annealing
-
Gangulee, A. “Structure of Electroplated and Vapor-Deposited Copper Films. II. Effects of Annealing” J. Appl. Phys. 43 (1972): 3943.
-
(1972)
J. Appl. Phys
, vol.43
, pp. 3943
-
-
Gangulee, A.1
-
128
-
-
0032686792
-
The Impact of Linewidth and Line Density on the Texture of Electroplated Cu in Damascene-Fabricated Lines
-
Vanasupa, L., D. Pinck, Y.-C. Joo, T. Nogami, S. Pramanick, S. Lopatin, and K. Yang. “The Impact of Linewidth and Line Density on the Texture of Electroplated Cu in Damascene-Fabricated Lines” Electrochem. Solid State Lett. 2, no. 6 (1999): 329.
-
(1999)
Electrochem. Solid State Lett
, vol.2
, Issue.6
, pp. 329
-
-
Vanasupa, L.1
Pinck, D.2
Joo, Y.-C.3
Nogami, T.4
Pramanick, S.5
Lopatin, S.6
Yang, K.7
-
130
-
-
0037598472
-
Chemical– Mechanical Polishing of Dual Damascene Aluminum Interconnect Structures
-
Wang, J.-F., A. R. Sethuraman, L. M. Cook, R. C. Kistler, and G. P. Schwartz. “Chemical– Mechanical Polishing of Dual Damascene Aluminum Interconnect Structures” Semicond. Int. (1995): 117–122.
-
(1995)
Semicond. Int
, pp. 117-122
-
-
Wang, J.-F.1
Sethuraman, A.R.2
Cook, L.M.3
Kistler, R.C.4
Schwartz, G.P.5
-
131
-
-
0032476325
-
Material Characteristics, Chemical– Mechanical Polishing of Aluminum Alloy Thin Films
-
Wang, Y. L., J. Wu, C. W. Liu, T. C. Wang, and J. Dun. “Material Characteristics, Chemical– Mechanical Polishing of Aluminum Alloy Thin Films” Thin Solid Films 332 (1998): 397–403.
-
(1998)
Thin Solid Films
, vol.332
, pp. 397-403
-
-
Wang, Y.L.1
Wu, J.2
Liu, C.W.3
Wang, T.C.4
Dun, J.5
-
132
-
-
0029324044
-
Mechanical Brush Scrubbing for Post-CMP Clean
-
Krussel, W. C., J. M. deLarios, and J. Zhang. “Mechanical Brush Scrubbing for Post-CMP Clean” Solid State Technol. 38, no. 6 (1995): 109.
-
(1995)
Solid State Technol
, vol.38
, Issue.6
, pp. 109
-
-
Krussel, W.C.1
Delarios, J.M.2
Zhang, J.3
-
133
-
-
0029197618
-
Post Chemical–Mechanical Planarization Cleanup Process for Interlayer Dielectric Films
-
Roy, S. R., I. Ali, G. Shinn, N. Furusawa, R. Shah, S. Peterman, K. Witt, S. Eastman, and P. Kumar. “Post Chemical–Mechanical Planarization Cleanup Process for Interlayer Dielectric Films”J. Electrochem. Soc 142 (1995): 216–226.
-
(1995)
J. Electrochem. Soc
, vol.142
, pp. 216-226
-
-
Roy, S.R.1
Ali, I.2
Shinn, G.3
Furusawa, N.4
Shah, R.5
Peterman, S.6
Witt, K.7
Eastman, S.8
Kumar, P.9
-
134
-
-
0030259176
-
Using Double-Sided Scrubbing Systems for Multiple General Fab Applications
-
Hymes, D. J., and I. J. Malik. “Using Double-Sided Scrubbing Systems for Multiple General Fab Applications” Micro 14 (1996): 7.
-
(1996)
Micro
, vol.14
, pp. 7
-
-
Hymes, D.J.1
Malik, I.J.2
-
135
-
-
85056972095
-
-
Fraser, B., M. B. Olsen, T. Phan, B. Morrison. Conference Proceeding Electrochemistry Society, 634.1997.
-
(1997)
Conference Proceeding Electrochemistry Society
, pp. 634
-
-
Fraser, B.1
Olsen, M.B.2
Phan, T.3
Morrison, B.4
-
136
-
-
0029537171
-
-
San Francisco, CA
-
Takenaka, N., Y. Satoh, A. Ishihama, K. Sakiyama. In Post CMP Cleaning Using Ice ScrubberCleaning, Conference Proceeding Mater Research Society. Vol. 386, 121–125. San Francisco, CA, 1995.
-
(1995)
Post CMP Cleaning Using Ice Scrubbercleaning, Conference Proceeding Mater Research Society
, vol.386
, pp. 121-125
-
-
Takenaka, N.1
Satoh, Y.2
Ishihama, A.3
Sakiyama, K.4
-
137
-
-
0040884102
-
-
edited by W. Kern, Park Ridge, NJ: Noyes Publications
-
Menon, V. B., and R. P. Donovan. In Handbook of Semiconductor Wafer Cleaning Technology, edited by W. Kern, 379. Park Ridge, NJ: Noyes Publications, 1993.
-
(1993)
Handbook of Semiconductor Wafer Cleaning Technology
, pp. 379
-
-
Menon, V.B.1
Donovan, R.P.2
-
138
-
-
0022029193
-
Megasonic Particle Removal from Solid-State Wafers
-
Shwartzman, S., A. Mayer, and W. Kern. “Megasonic Particle Removal from Solid-State Wafers” RCA Rev. 46-3 (1985): 81.
-
(1985)
RCA Rev
, vol.3-46
, pp. 81
-
-
Shwartzman, S.1
Mayer, A.2
Kern, W.3
-
139
-
-
0032300217
-
Effects of Post Chemical Mechanical Planarization Buffing on Defect Density of Tungsten and Oxide Wafers
-
Shen, J. J., W. D. Costas, L. M. Cook, and J. Farber. “Effects of Post Chemical Mechanical Planarization Buffing on Defect Density of Tungsten and Oxide Wafers” J. Electrochem. Soc 145 (1998): 4240–4243.
-
(1998)
J. Electrochem. Soc
, vol.145
, pp. 4240-4243
-
-
Shen, J.J.1
Costas, W.D.2
Cook, L.M.3
Farber, J.4
-
140
-
-
0028517258
-
Investigating the Effect of Secondary Platen Pressure on Post- Chemical–Mechanical Planarization Cleaning
-
Ali, I., S. R. Roy, and G. B. Shinn. “Investigating the Effect of Secondary Platen Pressure on Post- Chemical–Mechanical Planarization Cleaning” Microcontamination 12-10 (1994): 45–50.
-
(1994)
Microcontamination
, vol.12-10
, pp. 45-50
-
-
Ali, I.1
Roy, S.R.2
Shinn, G.B.3
-
141
-
-
0026961639
-
Electrical Properties of Chemical–Mechanical Polished Tetraethyl Orthosilicate Films with and Without Capping Layers
-
Cohen, S. A., M. A. Jaso, and A. A. Bright. “Electrical Properties of Chemical–Mechanical Polished Tetraethyl Orthosilicate Films with and Without Capping Layers” J. Electrochem. Soc 139 (1992): 3572–3574.
-
(1992)
J. Electrochem. Soc
, vol.139
, pp. 3572-3574
-
-
Cohen, S.A.1
Jaso, M.A.2
Bright, A.A.3
-
144
-
-
0028497652
-
Near Surface Modification of Silica Structure Induced by Chemical/Mechanical Polishing
-
Trogolo, J. A., and K. Rajan. “Near Surface Modification of Silica Structure Induced by Chemical/Mechanical Polishing” J. Mat. Sci. 29 (1994): 4548–4554.
-
(1994)
J. Mat. Sci
, vol.29
, pp. 4548-4554
-
-
Trogolo, J.A.1
Rajan, K.2
-
145
-
-
0001258406
-
Mechanisms of Copper Removal during Chemical Mechanical Polishing
-
Steigerwald, J. M., S. P. Murarka, J. Ho, R. J. Gutman, and D. J. Duquette. “Mechanisms of Copper Removal during Chemical Mechanical Polishing” J. Vac. Sci. Technol. B 13, no. 6 (1995): 2215–2218.
-
(1995)
J. Vac. Sci. Technol. B
, vol.13
, Issue.6
, pp. 2215-2218
-
-
Steigerwald, J.M.1
Murarka, S.P.2
Ho, J.3
Gutman, R.J.4
Duquette, D.J.5
-
148
-
-
0030871139
-
Corrosion Protection ofCopper by a Self-Assembled Monolayer of Alkanethiol
-
Feng, Y., W.-K. Teo, K.-S. Siow, Z. Gao, K.-L. Tan, and A.-K. Hsieh. “Corrosion Protection ofCopper by a Self-Assembled Monolayer of Alkanethiol” J. Electrochem. Soc 144 (1997): 55–64.
-
(1997)
J. Electrochem. Soc
, vol.144
, pp. 55-64
-
-
Feng, Y.1
Teo, W.-K.2
Siow, K.-S.3
Gao, Z.4
Tan, K.-L.5
Hsieh, A.-K.6
-
149
-
-
0031251007
-
Effects of Corrosion Environments on the Surface Finishing of Copper Chemical Mechanical Polishing
-
Wang, M. T., M. S. Tsai, C. Liu, W. T. Tseng, T. C. Chang, L. J. Chen, and M. C. Chen. “Effects of Corrosion Environments on the Surface Finishing of Copper Chemical Mechanical Polishing” Thin Solid Films 308–309 (1997): 520–522.
-
(1997)
Thin Solid Films
, vol.308-309
, pp. 520-522
-
-
Wang, M.T.1
Tsai, M.S.2
Liu, C.3
Tseng, W.T.4
Chang, T.C.5
Chen, L.J.6
Chen, M.C.7
-
150
-
-
0032022944
-
Aqueous Potential-pH Equilibria in Copper-Benzotriazole Systems
-
Tromans, D. “Aqueous Potential-pH Equilibria in Copper-Benzotriazole Systems” J. Electrochem. Soc 145 (1998): L43–L45.
-
(1998)
J. Electrochem. Soc
, vol.145
, pp. L43-L45
-
-
Tromans, D.1
-
151
-
-
0031999802
-
Influence of Initial Wafer Cleanliness on Metal Removal Efficiency in Immersion SC-1 Cleaning: Limitation of Immersion-Type Wet Cleaning, IEEE Trans
-
Osaka, T., and T. Hattori. “Influence of Initial Wafer Cleanliness on Metal Removal Efficiency in Immersion SC-1 Cleaning: Limitation of Immersion-Type Wet Cleaning, IEEE Trans” Semicond. Manufcat. 11, no. 1 (1998): 20–24.
-
(1998)
Semicond. Manufcat
, vol.11
, Issue.1
, pp. 20-24
-
-
Osaka, T.1
Hattori, T.2
-
152
-
-
28844435555
-
Post CMP Cleaning for Oxide and Tungsten Applications
-
de Larios, J. M., M. Ravkin, D. L. Hetherington, and J. J. Doyle. “Post CMP Cleaning for Oxide and Tungsten Applications” Semicond. Int. 121, (1996).
-
(1996)
Semicond. Int
, pp. 121
-
-
De Larios, J.M.1
Ravkin, M.2
Hetherington, D.L.3
Doyle, J.J.4
-
153
-
-
85056964297
-
-
2: A Model Review, Material Research Society Symposium. 386. 1995.
-
(1995)
2: A Model Review, Material Research Society Symposium
, pp. 386
-
-
Malik, I.J.1
Zhang, J.2
Jensen, A.J.3
Farber, J.J.4
Krusell, W.C.5
Raghavan, S.6
Rajhunath, C.7
|