Rapid characterization and modeling of pattern-dependent variation in chemical-mechanical polishing

IEEE Transactions on Semiconductor Manufacturing

Volumn 11, Issue 1, 1998, Pages 129-140

  Stine, Brian E ^b   Ouma, Dennis O ^a,b   Divecha, Rajesh R ^a,c   Boning, Duane S ^a,b   Chung, James E ^a,b   Hetherington, Dale L ^a,d   Harwood, C Randy ^e   Nakagawa, O Samuel ^f   Oh, Soo Young ^a,f  

^a IEEE   (United States)

^b USA   (United States)

^c Rockwell Semiconductor Systems   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

^e IPEC Planar   (United States)

^f HEWLETT PACKARD COMPANY   (United States)

Author keywords

Chemical mechanical polishing; Interconnect; Pattern dependencies; Spatial variation

Indexed keywords

CHEMICAL POLISHING; DIELECTRIC MATERIALS; MATHEMATICAL MODELS; OPTICAL FILMS; OXIDES; SILICON WAFERS; THICKNESS MEASUREMENT;

INTERCONNECT OXIDE PLANARIZATION PROCESS; INTERLEVEL DIELECTRIC; PATTERN DEPENDENT EFFECTS; RAPID DATA COLLECTION; TEST MASK DESIGNS;

INTEGRATED CIRCUIT LAYOUT;

EID: 0032000527     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.661292     Document Type: Article

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