The effects of post chemical mechanical planaization buffing on defect density of tungsten and oxide wafers

Journal of the Electrochemical Society

Volumn 145, Issue 12, 1998, Pages 4240-4243

  Shen, James J ^a   Costas, Wesley D ^a   Cook, Lee M ^a   Farber, Jeffrey ^b  

^a ROHM AND HAAS COMPANY   (United States)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BUFFING; DEFECTS; LASER APPLICATIONS; OXIDES; SURFACE ROUGHNESS; TUNGSTEN; WSI CIRCUITS;

CHEMICAL MECHANICAL PLANARIZATION (CMP); DEFECT DENSITY; TETRAETHYLORTHOSILICATES;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032300217     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838943     Document Type: Article

References (5)

1. W. C. Krusell, J. M. de Larios, and J. Zhang, Solid State Technol., 109 (June 1995).
2. S. R. Roy, I. Ali, G. Shinn, N. Furusawa, R. Shah, S. Peterman, K. Witt, S. Eastman, and P. Kumar, J. Electrochem. Soc., 142, 216 (1995).
3. R. Shah, S. Roy, G. Shinn, and I. Ali, Metrology: Key to Successful Cleaning Post CMP, MICRO 1994, p. 185.
4. M. Ravkin, Defect Evaluation for Primary Pad Oxide Polishing, CMPMIC Conference, Santa Clara, CA (May 1997).
5. F. Zhang, Private communication, Rodel, Inc. (1997).